New formalism for self-consistent parameters optimization of highly efficient solar cells
We analyzed self-consistently photoconversion efficiency of direct-gap A³B⁵ semiconductors based solar cells and optimized their main physical characteristics. Using gallium arsenide (GaAs) as an example and new efficient optimization formalism, we demonstrated that commonly accepted light re-...
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| Дата: | 2014 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118363 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | New formalism for self-consistent parameters optimization of highly efficient solar cells / A.V. Sachenko, V.P. Kostylyov, M.R. Kulish, I.O. Sokolovskyi, A.I. Shkrebtii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 134-148. — Бібліогр.: 26 назв. — англ. |
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irk-123456789-1183632017-05-31T03:05:55Z New formalism for self-consistent parameters optimization of highly efficient solar cells Sachenko, A.V. Kostylyov, V.P. Kulish, M.R. Sokolovsky, L.O. Shkrebtii, A.I. We analyzed self-consistently photoconversion efficiency of direct-gap A³B⁵ semiconductors based solar cells and optimized their main physical characteristics. Using gallium arsenide (GaAs) as an example and new efficient optimization formalism, we demonstrated that commonly accepted light re-emission and reabsorption in solar cells in technologically produced GaAs (in particular, with solid- or liquid-phase epitaxy) are not the main factors responsible for high photoconversion efficiency. As we proved instead, the doping level of the base material and its doping type as well as Shockley-Read-Hall and surface recombination velocities are much more important factors responsible for this photoconversion. We found that the maximum photoconversion efficiency (about 27% for AM1.5 conditions) in GaAs with typical parameters of recombination centers can be reached for p-type base doped at 2∙10¹⁷ cm⁻³. The open-circuit voltage VOC formation features are analyzed. The optimization provides a significant increase in VOC and the limiting photoconversion efficiency close to 30%. The approach of this research allows to predict the expected solar cell (for both direct- and indirect-gap semiconductor) characteristics, if material parameters are known. The applied formalism allows to analyze and to optimize mass production of both tandem solar cell and one-junction SC parameters. 2014 Article New formalism for self-consistent parameters optimization of highly efficient solar cells / A.V. Sachenko, V.P. Kostylyov, M.R. Kulish, I.O. Sokolovskyi, A.I. Shkrebtii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 134-148. — Бібліогр.: 26 назв. — англ. 1560-8034 PACS 88.40.jm, 88.40.jp http://dspace.nbuv.gov.ua/handle/123456789/118363 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
We analyzed self-consistently photoconversion efficiency of direct-gap A³B⁵
semiconductors based solar cells and optimized their main physical characteristics. Using
gallium arsenide (GaAs) as an example and new efficient optimization formalism, we
demonstrated that commonly accepted light re-emission and reabsorption in solar cells in
technologically produced GaAs (in particular, with solid- or liquid-phase epitaxy) are not
the main factors responsible for high photoconversion efficiency. As we proved instead,
the doping level of the base material and its doping type as well as Shockley-Read-Hall
and surface recombination velocities are much more important factors responsible for
this photoconversion. We found that the maximum photoconversion efficiency (about
27% for AM1.5 conditions) in GaAs with typical parameters of recombination centers
can be reached for p-type base doped at 2∙10¹⁷ cm⁻³. The open-circuit voltage VOC
formation features are analyzed. The optimization provides a significant increase in VOC
and the limiting photoconversion efficiency close to 30%. The approach of this research
allows to predict the expected solar cell (for both direct- and indirect-gap semiconductor)
characteristics, if material parameters are known. The applied formalism allows to
analyze and to optimize mass production of both tandem solar cell and one-junction SC
parameters. |
| format |
Article |
| author |
Sachenko, A.V. Kostylyov, V.P. Kulish, M.R. Sokolovsky, L.O. Shkrebtii, A.I. |
| spellingShingle |
Sachenko, A.V. Kostylyov, V.P. Kulish, M.R. Sokolovsky, L.O. Shkrebtii, A.I. New formalism for self-consistent parameters optimization of highly efficient solar cells Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Sachenko, A.V. Kostylyov, V.P. Kulish, M.R. Sokolovsky, L.O. Shkrebtii, A.I. |
| author_sort |
Sachenko, A.V. |
| title |
New formalism for self-consistent parameters optimization of highly efficient solar cells |
| title_short |
New formalism for self-consistent parameters optimization of highly efficient solar cells |
| title_full |
New formalism for self-consistent parameters optimization of highly efficient solar cells |
| title_fullStr |
New formalism for self-consistent parameters optimization of highly efficient solar cells |
| title_full_unstemmed |
New formalism for self-consistent parameters optimization of highly efficient solar cells |
| title_sort |
new formalism for self-consistent parameters optimization of highly efficient solar cells |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2014 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118363 |
| citation_txt |
New formalism for self-consistent parameters optimization
of highly efficient solar cells / A.V. Sachenko, V.P. Kostylyov, M.R. Kulish, I.O. Sokolovskyi, A.I. Shkrebtii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 134-148. — Бібліогр.: 26 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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