New formalism for self-consistent parameters optimization of highly efficient solar cells

We analyzed self-consistently photoconversion efficiency of direct-gap A³B⁵ semiconductors based solar cells and optimized their main physical characteristics. Using gallium arsenide (GaAs) as an example and new efficient optimization formalism, we demonstrated that commonly accepted light re-...

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Бібліографічні деталі
Дата:2014
Автори: Sachenko, A.V., Kostylyov, V.P., Kulish, M.R., Sokolovsky, L.O., Shkrebtii, A.I.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118363
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:New formalism for self-consistent parameters optimization of highly efficient solar cells / A.V. Sachenko, V.P. Kostylyov, M.R. Kulish, I.O. Sokolovskyi, A.I. Shkrebtii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 134-148. — Бібліогр.: 26 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-118363
record_format dspace
spelling irk-123456789-1183632017-05-31T03:05:55Z New formalism for self-consistent parameters optimization of highly efficient solar cells Sachenko, A.V. Kostylyov, V.P. Kulish, M.R. Sokolovsky, L.O. Shkrebtii, A.I. We analyzed self-consistently photoconversion efficiency of direct-gap A³B⁵ semiconductors based solar cells and optimized their main physical characteristics. Using gallium arsenide (GaAs) as an example and new efficient optimization formalism, we demonstrated that commonly accepted light re-emission and reabsorption in solar cells in technologically produced GaAs (in particular, with solid- or liquid-phase epitaxy) are not the main factors responsible for high photoconversion efficiency. As we proved instead, the doping level of the base material and its doping type as well as Shockley-Read-Hall and surface recombination velocities are much more important factors responsible for this photoconversion. We found that the maximum photoconversion efficiency (about 27% for AM1.5 conditions) in GaAs with typical parameters of recombination centers can be reached for p-type base doped at 2∙10¹⁷ cm⁻³. The open-circuit voltage VOC formation features are analyzed. The optimization provides a significant increase in VOC and the limiting photoconversion efficiency close to 30%. The approach of this research allows to predict the expected solar cell (for both direct- and indirect-gap semiconductor) characteristics, if material parameters are known. The applied formalism allows to analyze and to optimize mass production of both tandem solar cell and one-junction SC parameters. 2014 Article New formalism for self-consistent parameters optimization of highly efficient solar cells / A.V. Sachenko, V.P. Kostylyov, M.R. Kulish, I.O. Sokolovskyi, A.I. Shkrebtii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 134-148. — Бібліогр.: 26 назв. — англ. 1560-8034 PACS 88.40.jm, 88.40.jp http://dspace.nbuv.gov.ua/handle/123456789/118363 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description We analyzed self-consistently photoconversion efficiency of direct-gap A³B⁵ semiconductors based solar cells and optimized their main physical characteristics. Using gallium arsenide (GaAs) as an example and new efficient optimization formalism, we demonstrated that commonly accepted light re-emission and reabsorption in solar cells in technologically produced GaAs (in particular, with solid- or liquid-phase epitaxy) are not the main factors responsible for high photoconversion efficiency. As we proved instead, the doping level of the base material and its doping type as well as Shockley-Read-Hall and surface recombination velocities are much more important factors responsible for this photoconversion. We found that the maximum photoconversion efficiency (about 27% for AM1.5 conditions) in GaAs with typical parameters of recombination centers can be reached for p-type base doped at 2∙10¹⁷ cm⁻³. The open-circuit voltage VOC formation features are analyzed. The optimization provides a significant increase in VOC and the limiting photoconversion efficiency close to 30%. The approach of this research allows to predict the expected solar cell (for both direct- and indirect-gap semiconductor) characteristics, if material parameters are known. The applied formalism allows to analyze and to optimize mass production of both tandem solar cell and one-junction SC parameters.
format Article
author Sachenko, A.V.
Kostylyov, V.P.
Kulish, M.R.
Sokolovsky, L.O.
Shkrebtii, A.I.
spellingShingle Sachenko, A.V.
Kostylyov, V.P.
Kulish, M.R.
Sokolovsky, L.O.
Shkrebtii, A.I.
New formalism for self-consistent parameters optimization of highly efficient solar cells
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Sachenko, A.V.
Kostylyov, V.P.
Kulish, M.R.
Sokolovsky, L.O.
Shkrebtii, A.I.
author_sort Sachenko, A.V.
title New formalism for self-consistent parameters optimization of highly efficient solar cells
title_short New formalism for self-consistent parameters optimization of highly efficient solar cells
title_full New formalism for self-consistent parameters optimization of highly efficient solar cells
title_fullStr New formalism for self-consistent parameters optimization of highly efficient solar cells
title_full_unstemmed New formalism for self-consistent parameters optimization of highly efficient solar cells
title_sort new formalism for self-consistent parameters optimization of highly efficient solar cells
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2014
url http://dspace.nbuv.gov.ua/handle/123456789/118363
citation_txt New formalism for self-consistent parameters optimization of highly efficient solar cells / A.V. Sachenko, V.P. Kostylyov, M.R. Kulish, I.O. Sokolovskyi, A.I. Shkrebtii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 134-148. — Бібліогр.: 26 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT sachenkoav newformalismforselfconsistentparametersoptimizationofhighlyefficientsolarcells
AT kostylyovvp newformalismforselfconsistentparametersoptimizationofhighlyefficientsolarcells
AT kulishmr newformalismforselfconsistentparametersoptimizationofhighlyefficientsolarcells
AT sokolovskylo newformalismforselfconsistentparametersoptimizationofhighlyefficientsolarcells
AT shkrebtiiai newformalismforselfconsistentparametersoptimizationofhighlyefficientsolarcells
first_indexed 2023-10-18T20:31:58Z
last_indexed 2023-10-18T20:31:58Z
_version_ 1796150447319285760