Intrinsic concentration dependences in the HgCdTe quantum well in the range of the insulator-semimetal topological transition
The band structure and dependences of the intrinsic concentration in the mercury-cadmium-telluride (MCT) Hg₀.₃₂Cd₀.₆₈Te/Hg₀ Cd₀ Te/Hg₀.₃₂Cd₀.₆₈Te quantum wells in the framework of the 8x8 k.p envelope function method on the well width L and composition x were calculated. Modeling of the energy sp...
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| Дата: | 2014 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118376 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Intrinsic concentration dependences in the HgCdTe quantum well in the range of the insulator-semimetal topological transition / E.O. Melezhik, J.V. Gumenjuk-Sichevska, S.A. Dvoretskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 179-183. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118376 |
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dspace |
| spelling |
irk-123456789-1183762017-05-31T03:07:20Z Intrinsic concentration dependences in the HgCdTe quantum well in the range of the insulator-semimetal topological transition Melezhik, E.O. Gumenjuk-Sichevska, J.V. Dvoretskii, S.A. The band structure and dependences of the intrinsic concentration in the mercury-cadmium-telluride (MCT) Hg₀.₃₂Cd₀.₆₈Te/Hg₀ Cd₀ Te/Hg₀.₃₂Cd₀.₆₈Te quantum wells in the framework of the 8x8 k.p envelope function method on the well width L and composition x were calculated. Modeling of the energy spectra showed that the intrinsic concentration can vary about an order of magnitude with variation of the well width and chemical composition in the range of x < 0.16 and well width L < 20 nm at the liquid nitrogen temperature. These strong variations of the carrier concentration are caused by the insulator-semimetal topological transition. 2014 Article Intrinsic concentration dependences in the HgCdTe quantum well in the range of the insulator-semimetal topological transition / E.O. Melezhik, J.V. Gumenjuk-Sichevska, S.A. Dvoretskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 179-183. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 73.21.Fg, 84.40.-x http://dspace.nbuv.gov.ua/handle/123456789/118376 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The band structure and dependences of the intrinsic concentration in the
mercury-cadmium-telluride (MCT) Hg₀.₃₂Cd₀.₆₈Te/Hg₀ Cd₀ Te/Hg₀.₃₂Cd₀.₆₈Te quantum
wells in the framework of the 8x8 k.p envelope function method on the well width L and
composition x were calculated. Modeling of the energy spectra showed that the intrinsic
concentration can vary about an order of magnitude with variation of the well width and
chemical composition in the range of x < 0.16 and well width L < 20 nm at the liquid
nitrogen temperature. These strong variations of the carrier concentration are caused by
the insulator-semimetal topological transition. |
| format |
Article |
| author |
Melezhik, E.O. Gumenjuk-Sichevska, J.V. Dvoretskii, S.A. |
| spellingShingle |
Melezhik, E.O. Gumenjuk-Sichevska, J.V. Dvoretskii, S.A. Intrinsic concentration dependences in the HgCdTe quantum well in the range of the insulator-semimetal topological transition Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Melezhik, E.O. Gumenjuk-Sichevska, J.V. Dvoretskii, S.A. |
| author_sort |
Melezhik, E.O. |
| title |
Intrinsic concentration dependences in the HgCdTe quantum well in the range of the insulator-semimetal topological transition |
| title_short |
Intrinsic concentration dependences in the HgCdTe quantum well in the range of the insulator-semimetal topological transition |
| title_full |
Intrinsic concentration dependences in the HgCdTe quantum well in the range of the insulator-semimetal topological transition |
| title_fullStr |
Intrinsic concentration dependences in the HgCdTe quantum well in the range of the insulator-semimetal topological transition |
| title_full_unstemmed |
Intrinsic concentration dependences in the HgCdTe quantum well in the range of the insulator-semimetal topological transition |
| title_sort |
intrinsic concentration dependences in the hgcdte quantum well in the range of the insulator-semimetal topological transition |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2014 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118376 |
| citation_txt |
Intrinsic concentration dependences in the HgCdTe quantum well
in the range of the insulator-semimetal topological transition / E.O. Melezhik, J.V. Gumenjuk-Sichevska, S.A. Dvoretskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 179-183. — Бібліогр.: 7 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT melezhikeo intrinsicconcentrationdependencesinthehgcdtequantumwellintherangeoftheinsulatorsemimetaltopologicaltransition AT gumenjuksichevskajv intrinsicconcentrationdependencesinthehgcdtequantumwellintherangeoftheinsulatorsemimetaltopologicaltransition AT dvoretskiisa intrinsicconcentrationdependencesinthehgcdtequantumwellintherangeoftheinsulatorsemimetaltopologicaltransition |
| first_indexed |
2023-10-18T20:31:59Z |
| last_indexed |
2023-10-18T20:31:59Z |
| _version_ |
1796150448588062720 |