Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch
he second-harmonic generation (SHG) susceptibility of wurtzite type gallium nitride with single quantum wells has been theoretically investigated in the framework of the compact-density-matrix approach. The confined wave functions and energies of electrons in GaN/AlxGa₁₋xN have been calculated...
Збережено в:
| Дата: | 2010 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118393 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch / A. Elkadadra, D. Abouelaoualim, A. Oueriagli, A. Outzourhit // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 321-325. — Бібліогр.: 27 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | he second-harmonic generation (SHG) susceptibility of wurtzite type gallium
nitride with single quantum wells has been theoretically investigated in the framework of
the compact-density-matrix approach. The confined wave functions and energies of
electrons in GaN/AlxGa₁₋xN have been calculated in the effective-mass approximation,
solving the Schrödinger equation by Numerov’s method using the second and fourth
order approximations for the derivatives. The numerical results for typical
GaN/Al₀.₁₅Ga₀.₈₅N quantum wells show that a strong SHG effect can be realized in
electric field by choosing some optimized structural parameters. |
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