Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch
he second-harmonic generation (SHG) susceptibility of wurtzite type gallium nitride with single quantum wells has been theoretically investigated in the framework of the compact-density-matrix approach. The confined wave functions and energies of electrons in GaN/AlxGa₁₋xN have been calculated...
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| Дата: | 2010 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118393 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch / A. Elkadadra, D. Abouelaoualim, A. Oueriagli, A. Outzourhit // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 321-325. — Бібліогр.: 27 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118393 |
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irk-123456789-1183932017-05-31T03:07:21Z Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch Elkadadra, A. Abouelaoualim, D. Oueriagli, A. Outzourhit, A. he second-harmonic generation (SHG) susceptibility of wurtzite type gallium nitride with single quantum wells has been theoretically investigated in the framework of the compact-density-matrix approach. The confined wave functions and energies of electrons in GaN/AlxGa₁₋xN have been calculated in the effective-mass approximation, solving the Schrödinger equation by Numerov’s method using the second and fourth order approximations for the derivatives. The numerical results for typical GaN/Al₀.₁₅Ga₀.₈₅N quantum wells show that a strong SHG effect can be realized in electric field by choosing some optimized structural parameters. 2010 Article Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch / A. Elkadadra, D. Abouelaoualim, A. Oueriagli, A. Outzourhit // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 321-325. — Бібліогр.: 27 назв. — англ. 1560-8034 PACS 42.65.Ky, 85.60.-q, 07.05.Tp http://dspace.nbuv.gov.ua/handle/123456789/118393 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
he second-harmonic generation (SHG) susceptibility of wurtzite type gallium
nitride with single quantum wells has been theoretically investigated in the framework of
the compact-density-matrix approach. The confined wave functions and energies of
electrons in GaN/AlxGa₁₋xN have been calculated in the effective-mass approximation,
solving the Schrödinger equation by Numerov’s method using the second and fourth
order approximations for the derivatives. The numerical results for typical
GaN/Al₀.₁₅Ga₀.₈₅N quantum wells show that a strong SHG effect can be realized in
electric field by choosing some optimized structural parameters. |
| format |
Article |
| author |
Elkadadra, A. Abouelaoualim, D. Oueriagli, A. Outzourhit, A. |
| spellingShingle |
Elkadadra, A. Abouelaoualim, D. Oueriagli, A. Outzourhit, A. Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Elkadadra, A. Abouelaoualim, D. Oueriagli, A. Outzourhit, A. |
| author_sort |
Elkadadra, A. |
| title |
Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch |
| title_short |
Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch |
| title_full |
Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch |
| title_fullStr |
Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch |
| title_full_unstemmed |
Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch |
| title_sort |
electro-optic effect in gan/al₀.₁₅ga₀.₈₅n single quantum wells for optical switch |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2010 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118393 |
| citation_txt |
Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch / A. Elkadadra, D. Abouelaoualim, A. Oueriagli, A. Outzourhit // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 321-325. — Бібліогр.: 27 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:32:02Z |
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