Optical properties and structure of As-Ge-Se thin films
Thin chalcogenide films with compositions As₁₀Ge₂₂.₅Se₆₇.₅ and As₁₂Ge₃₃Se₅₅ have been investigated. Optical constants and thicknesses of these films were obtained from transmission spectra. Structure of initial bulk glasses and films were investigated by Raman spectroscopy. Both films are estimat...
Збережено в:
| Дата: | 2010 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118404 |
| Теги: |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Optical properties and structure of As-Ge-Se thin films / I.D. Tolmachov, A.V. Stronski, M. Vlcek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С.276-279. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Thin chalcogenide films with compositions As₁₀Ge₂₂.₅Se₆₇.₅ and As₁₂Ge₃₃Se₅₅
have been investigated. Optical constants and thicknesses of these films were obtained
from transmission spectra. Structure of initial bulk glasses and films were investigated by
Raman spectroscopy. Both films are estimated to have high values of the nonlinear
refractive index. |
|---|