Optical properties and structure of As-Ge-Se thin films

Thin chalcogenide films with compositions As₁₀Ge₂₂.₅Se₆₇.₅ and As₁₂Ge₃₃Se₅₅ have been investigated. Optical constants and thicknesses of these films were obtained from transmission spectra. Structure of initial bulk glasses and films were investigated by Raman spectroscopy. Both films are estimat...

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Дата:2010
Автори: Tolmachov, I.D., Stronski, A.V., Vlcek, M.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118404
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Optical properties and structure of As-Ge-Se thin films / I.D. Tolmachov, A.V. Stronski, M. Vlcek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С.276-279. — Бібліогр.: 14 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1184042017-05-31T03:06:16Z Optical properties and structure of As-Ge-Se thin films Tolmachov, I.D. Stronski, A.V. Vlcek, M. Thin chalcogenide films with compositions As₁₀Ge₂₂.₅Se₆₇.₅ and As₁₂Ge₃₃Se₅₅ have been investigated. Optical constants and thicknesses of these films were obtained from transmission spectra. Structure of initial bulk glasses and films were investigated by Raman spectroscopy. Both films are estimated to have high values of the nonlinear refractive index. 2010 Article Optical properties and structure of As-Ge-Se thin films / I.D. Tolmachov, A.V. Stronski, M. Vlcek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С.276-279. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 42.70.Mp, 64.75.St, 78.66.-w http://dspace.nbuv.gov.ua/handle/123456789/118404 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Thin chalcogenide films with compositions As₁₀Ge₂₂.₅Se₆₇.₅ and As₁₂Ge₃₃Se₅₅ have been investigated. Optical constants and thicknesses of these films were obtained from transmission spectra. Structure of initial bulk glasses and films were investigated by Raman spectroscopy. Both films are estimated to have high values of the nonlinear refractive index.
format Article
author Tolmachov, I.D.
Stronski, A.V.
Vlcek, M.
spellingShingle Tolmachov, I.D.
Stronski, A.V.
Vlcek, M.
Optical properties and structure of As-Ge-Se thin films
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Tolmachov, I.D.
Stronski, A.V.
Vlcek, M.
author_sort Tolmachov, I.D.
title Optical properties and structure of As-Ge-Se thin films
title_short Optical properties and structure of As-Ge-Se thin films
title_full Optical properties and structure of As-Ge-Se thin films
title_fullStr Optical properties and structure of As-Ge-Se thin films
title_full_unstemmed Optical properties and structure of As-Ge-Se thin films
title_sort optical properties and structure of as-ge-se thin films
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2010
url http://dspace.nbuv.gov.ua/handle/123456789/118404
citation_txt Optical properties and structure of As-Ge-Se thin films / I.D. Tolmachov, A.V. Stronski, M. Vlcek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С.276-279. — Бібліогр.: 14 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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AT stronskiav opticalpropertiesandstructureofasgesethinfilms
AT vlcekm opticalpropertiesandstructureofasgesethinfilms
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last_indexed 2023-10-18T20:32:03Z
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