Sponge-like nanostructured silicon for integrated emitters
A new approach to nanoporous silicon formation is proposed. Anomalies both in low current densities and low fluorine ion concentrations, which is lead to low uniformity of formed porous silicon, are under consideration. It is shown that at very low current densities and fluorine ion concentration...
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| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
|---|---|
| Дата: | 2010 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118408 |
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| Цитувати: | Sponge-like nanostructured silicon for integrated emitters / A. Hubarevich, P. Jaguiro, Y. Mukha, A. Smirnov, Ya. Solovjov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 294-297. — Бібліогр.: 14 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118408 |
|---|---|
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dspace |
| spelling |
irk-123456789-1184082017-05-31T03:07:23Z Sponge-like nanostructured silicon for integrated emitters Hubarevich, A. Jaguiro, P. Mukha, Y. Smirnov, A. Solovjov, Ya. A new approach to nanoporous silicon formation is proposed. Anomalies both in low current densities and low fluorine ion concentrations, which is lead to low uniformity of formed porous silicon, are under consideration. It is shown that at very low current densities and fluorine ion concentration high uniformity, high porosity nanoporous silicon layers can be created. Structural, electrical and optical properties of porous silicon formed in a wide range of current densities, doping levels of silicon substrates and fluorine concentrations are presented. 2010 Article Sponge-like nanostructured silicon for integrated emitters / A. Hubarevich, P. Jaguiro, Y. Mukha, A. Smirnov, Ya. Solovjov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 294-297. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 78.60.Fi, 81.05.Rm, 81.07.-b http://dspace.nbuv.gov.ua/handle/123456789/118408 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
A new approach to nanoporous silicon formation is proposed. Anomalies both
in low current densities and low fluorine ion concentrations, which is lead to low
uniformity of formed porous silicon, are under consideration. It is shown that at very low
current densities and fluorine ion concentration high uniformity, high porosity
nanoporous silicon layers can be created. Structural, electrical and optical properties of
porous silicon formed in a wide range of current densities, doping levels of silicon
substrates and fluorine concentrations are presented. |
| format |
Article |
| author |
Hubarevich, A. Jaguiro, P. Mukha, Y. Smirnov, A. Solovjov, Ya. |
| spellingShingle |
Hubarevich, A. Jaguiro, P. Mukha, Y. Smirnov, A. Solovjov, Ya. Sponge-like nanostructured silicon for integrated emitters Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Hubarevich, A. Jaguiro, P. Mukha, Y. Smirnov, A. Solovjov, Ya. |
| author_sort |
Hubarevich, A. |
| title |
Sponge-like nanostructured silicon for integrated emitters |
| title_short |
Sponge-like nanostructured silicon for integrated emitters |
| title_full |
Sponge-like nanostructured silicon for integrated emitters |
| title_fullStr |
Sponge-like nanostructured silicon for integrated emitters |
| title_full_unstemmed |
Sponge-like nanostructured silicon for integrated emitters |
| title_sort |
sponge-like nanostructured silicon for integrated emitters |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2010 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118408 |
| citation_txt |
Sponge-like nanostructured silicon for integrated emitters / A. Hubarevich, P. Jaguiro, Y. Mukha, A. Smirnov, Ya. Solovjov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 294-297. — Бібліогр.: 14 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:32:04Z |
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