Carrier transport mechanisms in InSb diffusion p-n junctions
The linearly-graded p-n junctions were prepared by diffusion of cadmium into n-InSb(100) substrate with the electron concentration n ~ 1.6*10¹⁵ cm⁻³ at the temperature T = 77 K. Passivation and protection of mesa structures have been carried out using thin films of CdTe. Forward and reverse curre...
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| Дата: | 2014 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118416 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Carrier transport mechanisms in InSb diffusion p-n junctions / A. Sukach, V. Tetyorkin, A. Voroschenko, A. Tkachuk, M. Kravetskii, I. Lucyshyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 325-330. — Бібліогр.: 25 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118416 |
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dspace |
| spelling |
irk-123456789-1184162017-05-31T03:04:12Z Carrier transport mechanisms in InSb diffusion p-n junctions Sukach, A. Tetyorkin, V. Voroschenko, A. Tkachuk, A. Kravetskii, M. Lucyshyn, I. The linearly-graded p-n junctions were prepared by diffusion of cadmium into n-InSb(100) substrate with the electron concentration n ~ 1.6*10¹⁵ cm⁻³ at the temperature T = 77 K. Passivation and protection of mesa structures have been carried out using thin films of CdTe. Forward and reverse current-voltage characteristics were investigated within the temperature range 77…156 K. It has been found that the total dark current consists of generation-recombination and tunneling current components, which are dominant at high (T = 120…156 K) and low (T < 120 K) temperatures, respectively. Experimental results have been explained using the model of a nonhomogeneous p-n junction. It has been shown that in the linearly-graded p-n junction with the rather thick (~1 m) depletion region tunneling current flows through the states related to dislocations in the depletion region. The performed estimation of electrical parameters of diffusion InSb p-n junctions allows to predict behavior of InSb-based photodiodes at operation temperatures T > 77 K. 2014 Article Carrier transport mechanisms in InSb diffusion p-n junctions / A. Sukach, V. Tetyorkin, A. Voroschenko, A. Tkachuk, M. Kravetskii, I. Lucyshyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 325-330. — Бібліогр.: 25 назв. — англ. 1560-8034 PACS 73.40.Kp, 73.40.Gk http://dspace.nbuv.gov.ua/handle/123456789/118416 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The linearly-graded p-n junctions were prepared by diffusion of cadmium into
n-InSb(100) substrate with the electron concentration n ~ 1.6*10¹⁵ cm⁻³ at the
temperature T = 77 K. Passivation and protection of mesa structures have been carried
out using thin films of CdTe. Forward and reverse current-voltage characteristics were
investigated within the temperature range 77…156 K. It has been found that the total
dark current consists of generation-recombination and tunneling current components,
which are dominant at high (T = 120…156 K) and low (T < 120 K) temperatures,
respectively. Experimental results have been explained using the model of a
nonhomogeneous p-n junction. It has been shown that in the linearly-graded p-n junction
with the rather thick (~1 m) depletion region tunneling current flows through the states
related to dislocations in the depletion region. The performed estimation of electrical
parameters of diffusion InSb p-n junctions allows to predict behavior of InSb-based
photodiodes at operation temperatures T > 77 K. |
| format |
Article |
| author |
Sukach, A. Tetyorkin, V. Voroschenko, A. Tkachuk, A. Kravetskii, M. Lucyshyn, I. |
| spellingShingle |
Sukach, A. Tetyorkin, V. Voroschenko, A. Tkachuk, A. Kravetskii, M. Lucyshyn, I. Carrier transport mechanisms in InSb diffusion p-n junctions Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Sukach, A. Tetyorkin, V. Voroschenko, A. Tkachuk, A. Kravetskii, M. Lucyshyn, I. |
| author_sort |
Sukach, A. |
| title |
Carrier transport mechanisms in InSb diffusion p-n junctions |
| title_short |
Carrier transport mechanisms in InSb diffusion p-n junctions |
| title_full |
Carrier transport mechanisms in InSb diffusion p-n junctions |
| title_fullStr |
Carrier transport mechanisms in InSb diffusion p-n junctions |
| title_full_unstemmed |
Carrier transport mechanisms in InSb diffusion p-n junctions |
| title_sort |
carrier transport mechanisms in insb diffusion p-n junctions |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2014 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118416 |
| citation_txt |
Carrier transport mechanisms in InSb diffusion p-n junctions / A. Sukach, V. Tetyorkin, A. Voroschenko, A. Tkachuk, M. Kravetskii, I. Lucyshyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 325-330. — Бібліогр.: 25 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:32:05Z |
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2023-10-18T20:32:05Z |
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