Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range

Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range

The possibility to create uncooled photodetector (PD) in the region close to l = 10 μm being based on p(Pb₁₋xSnxSe)-n(CdSe) heterojunction has been conceptually and practically confirmed. Design and technology of uncooled thin-film PD based on Pb Sn Se₁₋x p -n(CdSe) heterojunction in which broad-...

Повний опис

Збережено в:
Бібліографічні деталі
Дата:2014
Автори: Lepikh, Ya.I., Ivanchenko, I.A., Budiyanskaya, L.M.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118429
Теги: Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range / Ya.I. Lepikh, I.A. Ivanchenko, L.M. Budiyanskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 408-411. — Бібліогр.: 10 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-118429
record_format dspace
spelling irk-123456789-1184292017-05-31T03:08:01Z Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range Lepikh, Ya.I. Ivanchenko, I.A. Budiyanskaya, L.M. The possibility to create uncooled photodetector (PD) in the region close to l = 10 μm being based on p(Pb₁₋xSnxSe)-n(CdSe) heterojunction has been conceptually and practically confirmed. Design and technology of uncooled thin-film PD based on Pb Sn Se₁₋x p -n(CdSe) heterojunction in which broad-band CdSe layer is located on the illuminated surface and plays the role of the optical filter with respect to the lower layer of ternary compound. The PD spectral characteristics at room temperature have been researched, which confirms the photoactivity of both heterojunction layers. The mechanism of current flow in the PD structure based on the above heterojunction and the mechanism of the PD samples sensitivity at room temperature in the far infrared spectrum, the determining factor of which is the amount of wide-gap semiconductors where space charge-limited current appears, have been investigated. The uncooled PD detectability typical for polycrystalline structures 106 …107 сm*Hz¹/²/W has been discovered. 2014 Article Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range / Ya.I. Lepikh, I.A. Ivanchenko, L.M. Budiyanskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 408-411. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 07.57.Kp, 73.40.-c http://dspace.nbuv.gov.ua/handle/123456789/118429 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The possibility to create uncooled photodetector (PD) in the region close to l = 10 μm being based on p(Pb₁₋xSnxSe)-n(CdSe) heterojunction has been conceptually and practically confirmed. Design and technology of uncooled thin-film PD based on Pb Sn Se₁₋x p -n(CdSe) heterojunction in which broad-band CdSe layer is located on the illuminated surface and plays the role of the optical filter with respect to the lower layer of ternary compound. The PD spectral characteristics at room temperature have been researched, which confirms the photoactivity of both heterojunction layers. The mechanism of current flow in the PD structure based on the above heterojunction and the mechanism of the PD samples sensitivity at room temperature in the far infrared spectrum, the determining factor of which is the amount of wide-gap semiconductors where space charge-limited current appears, have been investigated. The uncooled PD detectability typical for polycrystalline structures 106 …107 сm*Hz¹/²/W has been discovered.
format Article
author Lepikh, Ya.I.
Ivanchenko, I.A.
Budiyanskaya, L.M.
spellingShingle Lepikh, Ya.I.
Ivanchenko, I.A.
Budiyanskaya, L.M.
Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Lepikh, Ya.I.
Ivanchenko, I.A.
Budiyanskaya, L.M.
author_sort Lepikh, Ya.I.
title Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range
title_short Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range
title_full Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range
title_fullStr Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range
title_full_unstemmed Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range
title_sort uncooled р(pb₁₋xsnxse)-n(cdse) heterostructure-based photodetector for the far infrared spectral range
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2014
url http://dspace.nbuv.gov.ua/handle/123456789/118429
citation_txt Uncooled р(Pb₁₋xSnxSe)-n(CdSe) heterostructure-based photodetector for the far infrared spectral range / Ya.I. Lepikh, I.A. Ivanchenko, L.M. Budiyanskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 408-411. — Бібліогр.: 10 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT lepikhyai uncooledrpb1xsnxsencdseheterostructurebasedphotodetectorforthefarinfraredspectralrange
AT ivanchenkoia uncooledrpb1xsnxsencdseheterostructurebasedphotodetectorforthefarinfraredspectralrange
AT budiyanskayalm uncooledrpb1xsnxsencdseheterostructurebasedphotodetectorforthefarinfraredspectralrange
first_indexed 2023-10-18T20:32:18Z
last_indexed 2023-10-18T20:32:18Z
_version_ 1796150453871837184

Схожі ресурси