Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers
The effect of 8.6∙10¹⁷ n/cm² with fast neutron irradiation on the magnetic susceptibility of Si₀.₉₇Ge₀.₀₃ thread-like crystals (whiskers) with impurity concentration near metal-insulator junction has been studied. Significant differences have been observed in the change of magnetic susceptibility...
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| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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| Дата: | 2014 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118430 |
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| Цитувати: | Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers / P.G. Litovchenko, N.T. Pavlovska, Yu.V. Pavlovskyy, Yu.O. Ugrin, G. Luka, I.P. Ostrovskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 416-420. — Бібліогр.: 12 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1184302017-05-31T03:07:06Z Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers Litovchenko, P.G. Pavlovska, N.T. Pavlovskyy, Yu.V. Ugrin, Yu.O. Luka, G. Ostrovskyy, I.P. The effect of 8.6∙10¹⁷ n/cm² with fast neutron irradiation on the magnetic susceptibility of Si₀.₉₇Ge₀.₀₃ thread-like crystals (whiskers) with impurity concentration near metal-insulator junction has been studied. Significant differences have been observed in the change of magnetic susceptibility of irradiated whiskers and bulk Cz-Si. The low-temperature (4.2…40 K) changes of magnetoresistance in magnetic fields up to 14 T, caused by irradiation, have been studied. It has been established that at temperatures near 4.2 K, a significant contribution to the conductivity is made by light charge carriers of low concentration but with high mobility. The level supplying these charge carriers has the energy of e = 2.1 meV, and with application of magnetic field it increases up to e = 2.5 meV in approx. 10 T field. It demonstrates the fact that the reason of magnetoresistance, beside the magneto-field decrease of mobility, is the magneto-field decrease in the free carrier concentration. At temperatures approx. 40 K, conductivity is due to holes, the activation energy whereof is e = 11.5 meV, which is practically independent of the magnetic field. 2014 Article Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers / P.G. Litovchenko, N.T. Pavlovska, Yu.V. Pavlovskyy, Yu.O. Ugrin, G. Luka, I.P. Ostrovskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 416-420. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS 61.82.FK, 72.20.I, 72.20.MY http://dspace.nbuv.gov.ua/handle/123456789/118430 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The effect of 8.6∙10¹⁷ n/cm² with fast neutron irradiation on the magnetic
susceptibility of Si₀.₉₇Ge₀.₀₃ thread-like crystals (whiskers) with impurity concentration
near metal-insulator junction has been studied. Significant differences have been
observed in the change of magnetic susceptibility of irradiated whiskers and bulk Cz-Si.
The low-temperature (4.2…40 K) changes of magnetoresistance in magnetic fields up to
14 T, caused by irradiation, have been studied. It has been established that at
temperatures near 4.2 K, a significant contribution to the conductivity is made by light
charge carriers of low concentration but with high mobility. The level supplying these
charge carriers has the energy of e = 2.1 meV, and with application of magnetic field it
increases up to e = 2.5 meV in approx. 10 T field. It demonstrates the fact that the reason
of magnetoresistance, beside the magneto-field decrease of mobility, is the magneto-field
decrease in the free carrier concentration. At temperatures approx. 40 K, conductivity is
due to holes, the activation energy whereof is e = 11.5 meV, which is practically
independent of the magnetic field. |
| format |
Article |
| author |
Litovchenko, P.G. Pavlovska, N.T. Pavlovskyy, Yu.V. Ugrin, Yu.O. Luka, G. Ostrovskyy, I.P. |
| spellingShingle |
Litovchenko, P.G. Pavlovska, N.T. Pavlovskyy, Yu.V. Ugrin, Yu.O. Luka, G. Ostrovskyy, I.P. Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Litovchenko, P.G. Pavlovska, N.T. Pavlovskyy, Yu.V. Ugrin, Yu.O. Luka, G. Ostrovskyy, I.P. |
| author_sort |
Litovchenko, P.G. |
| title |
Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers |
| title_short |
Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers |
| title_full |
Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers |
| title_fullStr |
Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers |
| title_full_unstemmed |
Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers |
| title_sort |
magnetic and magnetoresistive characteristics of neutron-irradiated si₀.₉₇ge₀.₀₃ whiskers |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2014 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118430 |
| citation_txt |
Magnetic and magnetoresistive characteristics of neutron-irradiated Si₀.₉₇Ge₀.₀₃ whiskers / P.G. Litovchenko, N.T. Pavlovska, Yu.V. Pavlovskyy, Yu.O. Ugrin, G. Luka, I.P. Ostrovskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 416-420. — Бібліогр.: 12 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:32:19Z |
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