Structural and optical studies of (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films deposited at different technological conditions
(Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films were deposited upon a quartz substrate by rapid thermal evaporation at temperatures 1050, 1200, and 1350 °C. Structural studies of the as-deposited thin films were carried out by scanning electron microscopy and atomic force microscopy. It is shown that the surfa...
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| Дата: | 2014 |
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| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118484 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Structural and optical studies of (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films deposited at different technological conditions / I.P. Studenyak, Yu.Yu. Neimet, Y.Y. Rati, M.Yu. Buchuk, S. Kokenyesi, L. Daroci, R. Bohdan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 232-236. — Бібліогр.: 20 назв. — англ. |
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irk-123456789-1184842017-05-31T03:06:27Z Structural and optical studies of (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films deposited at different technological conditions Studenyak, I.P. Neimet, Yu.Yu. Rati, Y.Y. Buchuk, M.Yu. Kökényesi, S. Daróci, L. Bohdan, R. (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films were deposited upon a quartz substrate by rapid thermal evaporation at temperatures 1050, 1200, and 1350 °C. Structural studies of the as-deposited thin films were carried out by scanning electron microscopy and atomic force microscopy. It is shown that the surfaces of all the films were covered with Ag-rich crystalline micrometer sized cones. The optical transmission spectra for as-deposited thin films were studied at room temperature. The absorption spectra in the region of its exponential behaviour were analyzed, the dispersion dependences of refractive index as well as their variation depending on evaporation temperature were investigated. 2014 Article Structural and optical studies of (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films deposited at different technological conditions / I.P. Studenyak, Yu.Yu. Neimet, Y.Y. Rati, M.Yu. Buchuk, S. Kokenyesi, L. Daroci, R. Bohdan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 232-236. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS 78.40.Ha, 77.80.Bh http://dspace.nbuv.gov.ua/handle/123456789/118484 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
(Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films were deposited upon a quartz substrate by
rapid thermal evaporation at temperatures 1050, 1200, and 1350 °C. Structural studies of
the as-deposited thin films were carried out by scanning electron microscopy and atomic
force microscopy. It is shown that the surfaces of all the films were covered with Ag-rich
crystalline micrometer sized cones. The optical transmission spectra for as-deposited thin
films were studied at room temperature. The absorption spectra in the region of its
exponential behaviour were analyzed, the dispersion dependences of refractive index as
well as their variation depending on evaporation temperature were investigated. |
| format |
Article |
| author |
Studenyak, I.P. Neimet, Yu.Yu. Rati, Y.Y. Buchuk, M.Yu. Kökényesi, S. Daróci, L. Bohdan, R. |
| spellingShingle |
Studenyak, I.P. Neimet, Yu.Yu. Rati, Y.Y. Buchuk, M.Yu. Kökényesi, S. Daróci, L. Bohdan, R. Structural and optical studies of (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films deposited at different technological conditions Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Studenyak, I.P. Neimet, Yu.Yu. Rati, Y.Y. Buchuk, M.Yu. Kökényesi, S. Daróci, L. Bohdan, R. |
| author_sort |
Studenyak, I.P. |
| title |
Structural and optical studies of (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films deposited at different technological conditions |
| title_short |
Structural and optical studies of (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films deposited at different technological conditions |
| title_full |
Structural and optical studies of (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films deposited at different technological conditions |
| title_fullStr |
Structural and optical studies of (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films deposited at different technological conditions |
| title_full_unstemmed |
Structural and optical studies of (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films deposited at different technological conditions |
| title_sort |
structural and optical studies of (ag₃ass₃)₀.₆(as₂s₃)₀.₄ thin films deposited at different technological conditions |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2014 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118484 |
| citation_txt |
Structural and optical studies of (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films deposited at different technological conditions / I.P. Studenyak, Yu.Yu. Neimet, Y.Y. Rati, M.Yu. Buchuk, S. Kokenyesi, L. Daroci, R. Bohdan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 232-236. — Бібліогр.: 20 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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