Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm
A mathematical model of the construction of silicon photodiode based on epitaxial structure enabling to regulate the absorption edge of silicon in the long-wave spectral range is presented. The suggested model allows calculating the construction that possesses low sensitivity for the wavelengths...
Збережено в:
| Дата: | 2014 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118492 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm / Yu. Dobrovolskyi, L. Pidkamin, V. Brus, V. Kuzenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 256-259. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118492 |
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| record_format |
dspace |
| spelling |
irk-123456789-1184922017-05-31T03:07:44Z Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm Dobrovolskyi, Yu. Pidkamin, L. Brus, V. Kuzenko, V. A mathematical model of the construction of silicon photodiode based on epitaxial structure enabling to regulate the absorption edge of silicon in the long-wave spectral range is presented. The suggested model allows calculating the construction that possesses low sensitivity for the wavelengths larger than 600 nm and maximal values near the wavelength 254 nm. 2014 Article Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm / Yu. Dobrovolskyi, L. Pidkamin, V. Brus, V. Kuzenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 256-259. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 61.80.Ba, 85.60.Dw http://dspace.nbuv.gov.ua/handle/123456789/118492 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
A mathematical model of the construction of silicon photodiode based on
epitaxial structure enabling to regulate the absorption edge of silicon in the long-wave
spectral range is presented. The suggested model allows calculating the construction that
possesses low sensitivity for the wavelengths larger than 600 nm and maximal values
near the wavelength 254 nm. |
| format |
Article |
| author |
Dobrovolskyi, Yu. Pidkamin, L. Brus, V. Kuzenko, V. |
| spellingShingle |
Dobrovolskyi, Yu. Pidkamin, L. Brus, V. Kuzenko, V. Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Dobrovolskyi, Yu. Pidkamin, L. Brus, V. Kuzenko, V. |
| author_sort |
Dobrovolskyi, Yu. |
| title |
Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm |
| title_short |
Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm |
| title_full |
Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm |
| title_fullStr |
Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm |
| title_full_unstemmed |
Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm |
| title_sort |
photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2014 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118492 |
| citation_txt |
Photodiode based on epitaxial silicon
with high sensitivity at the wavelength 254 nm / Yu. Dobrovolskyi, L. Pidkamin, V. Brus, V. Kuzenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 256-259. — Бібліогр.: 13 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT dobrovolskyiyu photodiodebasedonepitaxialsiliconwithhighsensitivityatthewavelength254nm AT pidkaminl photodiodebasedonepitaxialsiliconwithhighsensitivityatthewavelength254nm AT brusv photodiodebasedonepitaxialsiliconwithhighsensitivityatthewavelength254nm AT kuzenkov photodiodebasedonepitaxialsiliconwithhighsensitivityatthewavelength254nm |
| first_indexed |
2023-10-18T20:32:10Z |
| last_indexed |
2023-10-18T20:32:10Z |
| _version_ |
1796150458535903232 |