The electrical resistance of spatially varied magnetic interface. The role of normal scattering
We investigate the diffusive electron transport in conductors with spatially inhomogeneous magnetic properties taking into account both impurity and normal scattering. It is found that the additional interface resistance that arises due to the magnetic inhomogeneity depends essentially on their spat...
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| Дата: | 2011 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | Russian |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2011
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| Назва видання: | Физика низких температур |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118493 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The electrical resistance of spatially varied magnetic interface. The role of normal scattering / R.N. Gurzhi, A.N. Kalinenko, A.I. Kopeliovich, P.V. Pyshkin, A.V. Yanovsky // Физика низких температур. — 2011. — Т. 37, № 2. — С. 186–194. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118493 |
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irk-123456789-1184932017-05-31T03:08:56Z The electrical resistance of spatially varied magnetic interface. The role of normal scattering Gurzhi, R.N. Kalinenko, A.N. Kopeliovich, A.I. Pyshkin, P.V. Yanovsky, A.V. Электронные свойства проводящих систем We investigate the diffusive electron transport in conductors with spatially inhomogeneous magnetic properties taking into account both impurity and normal scattering. It is found that the additional interface resistance that arises due to the magnetic inhomogeneity depends essentially on their spatial characteristics. The resistance is proportional to the spin flip time in the case when the magnetic properties of the conducting system vary smoothly enough along the sample. It can be used to direct experimental investigation of spin flip processes. In the opposite case, when magnetic characteristics are varied sharply, the additional resistance depends essentially on the difference of magnetic properties of the sides far from the interface region. The resistance increases as the frequency of the electron-electron scattering increases. We consider also two types of smooth interfaces: (i) between fully spin-polarized magnetics and usual magnetic (or non-magnetic) conductors, and (ii) between two fully oppositely polarized magnetic conductors. It is shown that the interface resistance is very sensitive to appearing of the fully spin-polarized state under the applied external field. 2011 Article The electrical resistance of spatially varied magnetic interface. The role of normal scattering / R.N. Gurzhi, A.N. Kalinenko, A.I. Kopeliovich, P.V. Pyshkin, A.V. Yanovsky // Физика низких температур. — 2011. — Т. 37, № 2. — С. 186–194. — Бібліогр.: 13 назв. — англ. 0132-6414 PACS: 72.25.Mk, 73.40.Cg http://dspace.nbuv.gov.ua/handle/123456789/118493 ru Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
Russian |
| topic |
Электронные свойства проводящих систем Электронные свойства проводящих систем |
| spellingShingle |
Электронные свойства проводящих систем Электронные свойства проводящих систем Gurzhi, R.N. Kalinenko, A.N. Kopeliovich, A.I. Pyshkin, P.V. Yanovsky, A.V. The electrical resistance of spatially varied magnetic interface. The role of normal scattering Физика низких температур |
| description |
We investigate the diffusive electron transport in conductors with spatially inhomogeneous magnetic properties taking into account both impurity and normal scattering. It is found that the additional interface resistance that arises due to the magnetic inhomogeneity depends essentially on their spatial characteristics. The resistance is proportional to the spin flip time in the case when the magnetic properties of the conducting system vary smoothly enough along the sample. It can be used to direct experimental investigation of spin flip processes. In the opposite case, when magnetic characteristics are varied sharply, the additional resistance depends essentially on the difference of magnetic properties of the sides far from the interface region. The resistance increases as the frequency of the electron-electron scattering increases. We consider also two types of smooth interfaces: (i) between fully spin-polarized magnetics and usual magnetic (or non-magnetic) conductors, and (ii) between two fully oppositely polarized magnetic conductors. It is shown that the interface resistance is very sensitive to appearing of the fully spin-polarized state under the applied external field. |
| format |
Article |
| author |
Gurzhi, R.N. Kalinenko, A.N. Kopeliovich, A.I. Pyshkin, P.V. Yanovsky, A.V. |
| author_facet |
Gurzhi, R.N. Kalinenko, A.N. Kopeliovich, A.I. Pyshkin, P.V. Yanovsky, A.V. |
| author_sort |
Gurzhi, R.N. |
| title |
The electrical resistance of spatially varied magnetic interface. The role of normal scattering |
| title_short |
The electrical resistance of spatially varied magnetic interface. The role of normal scattering |
| title_full |
The electrical resistance of spatially varied magnetic interface. The role of normal scattering |
| title_fullStr |
The electrical resistance of spatially varied magnetic interface. The role of normal scattering |
| title_full_unstemmed |
The electrical resistance of spatially varied magnetic interface. The role of normal scattering |
| title_sort |
electrical resistance of spatially varied magnetic interface. the role of normal scattering |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| publishDate |
2011 |
| topic_facet |
Электронные свойства проводящих систем |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118493 |
| citation_txt |
The electrical resistance of spatially varied magnetic interface. The role of normal scattering / R.N. Gurzhi, A.N. Kalinenko, A.I. Kopeliovich, P.V. Pyshkin, A.V. Yanovsky // Физика низких температур. — 2011. — Т. 37, № 2. — С. 186–194. — Бібліогр.: 13 назв. — англ. |
| series |
Физика низких температур |
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