Heterostructure ohmic contacts to p-CdTe polycrystalline films
Heterostructure contacts p⁺ -PbTe/p-CdTe were prepared using the hot-wall technique on glassceramic substrates. It has been shown that the potential barrier at the p⁺ -PbTe/p-CdTe interface is not formed in the case of heavily doped lead telluride. That allows one to create ohmic heterocontacts...
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| Дата: | 2014 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118495 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Heterostructure ohmic contacts to p-CdTe polycrystalline films / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 268-271. — Бібліогр.: 21 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1184952017-05-31T03:05:40Z Heterostructure ohmic contacts to p-CdTe polycrystalline films Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. Heterostructure contacts p⁺ -PbTe/p-CdTe were prepared using the hot-wall technique on glassceramic substrates. It has been shown that the potential barrier at the p⁺ -PbTe/p-CdTe interface is not formed in the case of heavily doped lead telluride. That allows one to create ohmic heterocontacts of metal-p⁺ -PbTe/p-CdTe type. The transverse and in-plane transport of carriers has been investigated as a function of bias voltage and temperature. The current-voltage characteristics measured for the transverse arrangement of contacts exhibited ohmic behavior. The current-voltage characteristics of these contacts are determined by unipolar injection of holes from p⁺ -PbTe into p-CdTe. The inplane transport has been explained by presence of potential barriers at the grain boundaries. The potential barrier height has been estimated to be ~0.1 eV at room temperature. The mechanism of carrier transport is thermionic emission. 2014 Article Heterostructure ohmic contacts to p-CdTe polycrystalline films / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 268-271. — Бібліогр.: 21 назв. — англ. 1560-8034 PACS 78.30.Fs, 73.40.-c, 73.61.Ga http://dspace.nbuv.gov.ua/handle/123456789/118495 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Heterostructure contacts p⁺
-PbTe/p-CdTe were prepared using the hot-wall
technique on glassceramic substrates. It has been shown that the potential barrier at the
p⁺
-PbTe/p-CdTe interface is not formed in the case of heavily doped lead telluride. That
allows one to create ohmic heterocontacts of metal-p⁺
-PbTe/p-CdTe type. The transverse
and in-plane transport of carriers has been investigated as a function of bias voltage and
temperature. The current-voltage characteristics measured for the transverse arrangement
of contacts exhibited ohmic behavior. The current-voltage characteristics of these
contacts are determined by unipolar injection of holes from p⁺
-PbTe into p-CdTe. The inplane
transport has been explained by presence of potential barriers at the grain
boundaries. The potential barrier height has been estimated to be ~0.1 eV at room
temperature. The mechanism of carrier transport is thermionic emission. |
| format |
Article |
| author |
Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. |
| spellingShingle |
Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. Heterostructure ohmic contacts to p-CdTe polycrystalline films Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. |
| author_sort |
Sukach, A.V. |
| title |
Heterostructure ohmic contacts to p-CdTe polycrystalline films |
| title_short |
Heterostructure ohmic contacts to p-CdTe polycrystalline films |
| title_full |
Heterostructure ohmic contacts to p-CdTe polycrystalline films |
| title_fullStr |
Heterostructure ohmic contacts to p-CdTe polycrystalline films |
| title_full_unstemmed |
Heterostructure ohmic contacts to p-CdTe polycrystalline films |
| title_sort |
heterostructure ohmic contacts to p-cdte polycrystalline films |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2014 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118495 |
| citation_txt |
Heterostructure ohmic contacts to p-CdTe polycrystalline films / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 268-271. — Бібліогр.: 21 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT sukachav heterostructureohmiccontactstopcdtepolycrystallinefilms AT tetyorkinvv heterostructureohmiccontactstopcdtepolycrystallinefilms AT tkachukai heterostructureohmiccontactstopcdtepolycrystallinefilms |
| first_indexed |
2023-10-18T20:32:11Z |
| last_indexed |
2023-10-18T20:32:11Z |
| _version_ |
1796150458853621760 |