Influence of weak magnetic fields treatment on photoluminescence of GaAs
Long-term transformations in photoluminescence of GaAs single crystals treated with pulsed weak magnetic fields have been obtained. Treatments were performed in the multi-pulse (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 5 min) regime. The defect structure transformations were inferred from the radiat...
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| Date: | 2014 |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118498 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Influence of weak magnetic fields treatment on photoluminescence of GaAs / S.M. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 272-274. — Бібліогр.: 4 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | Long-term transformations in photoluminescence of GaAs single crystals
treated with pulsed weak magnetic fields have been obtained. Treatments were
performed in the multi-pulse (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 5 min) regime. The
defect structure transformations were inferred from the radiative recombination spectra
within the range 0.6 to 2.5 μm at 300 and 77 K. A possible mechanism of the observed
modifications related with electron-spin transformation is discussed. |
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