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Influence of weak magnetic fields treatment on photoluminescence of GaAs
Long-term transformations in photoluminescence of GaAs single crystals treated with pulsed weak magnetic fields have been obtained. Treatments were performed in the multi-pulse (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 5 min) regime. The defect structure transformations were inferred from the radiat...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118498 |
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irk-123456789-1184982017-05-31T03:05:49Z Influence of weak magnetic fields treatment on photoluminescence of GaAs Red'ko, S.M. Long-term transformations in photoluminescence of GaAs single crystals treated with pulsed weak magnetic fields have been obtained. Treatments were performed in the multi-pulse (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 5 min) regime. The defect structure transformations were inferred from the radiative recombination spectra within the range 0.6 to 2.5 μm at 300 and 77 K. A possible mechanism of the observed modifications related with electron-spin transformation is discussed. 2014 Article Influence of weak magnetic fields treatment on photoluminescence of GaAs / S.M. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 272-274. — Бібліогр.: 4 назв. — англ. 1560-8034 PACS 78.55.Cr, 71.55.Eq http://dspace.nbuv.gov.ua/handle/123456789/118498 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
| language |
English |
| description |
Long-term transformations in photoluminescence of GaAs single crystals
treated with pulsed weak magnetic fields have been obtained. Treatments were
performed in the multi-pulse (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 5 min) regime. The
defect structure transformations were inferred from the radiative recombination spectra
within the range 0.6 to 2.5 μm at 300 and 77 K. A possible mechanism of the observed
modifications related with electron-spin transformation is discussed. |
| format |
Article |
| author |
Red'ko, S.M. |
| spellingShingle |
Red'ko, S.M. Influence of weak magnetic fields treatment on photoluminescence of GaAs Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Red'ko, S.M. |
| author_sort |
Red'ko, S.M. |
| title |
Influence of weak magnetic fields treatment on photoluminescence of GaAs |
| title_short |
Influence of weak magnetic fields treatment on photoluminescence of GaAs |
| title_full |
Influence of weak magnetic fields treatment on photoluminescence of GaAs |
| title_fullStr |
Influence of weak magnetic fields treatment on photoluminescence of GaAs |
| title_full_unstemmed |
Influence of weak magnetic fields treatment on photoluminescence of GaAs |
| title_sort |
influence of weak magnetic fields treatment on photoluminescence of gaas |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2014 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118498 |
| citation_txt |
Influence of weak magnetic fields treatment
on photoluminescence of GaAs / S.M. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 272-274. — Бібліогр.: 4 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT redkosm influenceofweakmagneticfieldstreatmentonphotoluminescenceofgaas |
| first_indexed |
2023-10-18T20:32:11Z |
| last_indexed |
2023-10-18T20:32:11Z |
| _version_ |
1796150459172388864 |