A model for non-thermal action of microwave radiation on oxide film/semiconductor structures
A model is considered that explains mechanism of non-thermal action of microwave radiation on the thin SiO₂ (ТiO₂, Er₂O₃, Gd₂O₃) film/SiC and SiO₂/GaAs structures. It assumes that the centers of electron-hole recombination are redistributed because of resonance interaction between dislocations of...
Збережено в:
| Дата: | 2014 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118513 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | A model for non-thermal action of microwave radiation on oxide film/semiconductor structures / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 227-231. — Бібліогр.: 26 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118513 |
|---|---|
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dspace |
| spelling |
irk-123456789-1185132017-05-31T03:07:11Z A model for non-thermal action of microwave radiation on oxide film/semiconductor structures Okhrimenko, O.B. A model is considered that explains mechanism of non-thermal action of microwave radiation on the thin SiO₂ (ТiO₂, Er₂O₃, Gd₂O₃) film/SiC and SiO₂/GaAs structures. It assumes that the centers of electron-hole recombination are redistributed because of resonance interaction between dislocations of certain length and microwave radiation. As a result, additional bands appear in photoluminescence (PL) spectra of the oxide film/SiC structures or intensities of some bands are redistributed in the PL spectra of the SiO₂/GaAs structure, as well as optical density of the oxide film/SiC structures changes. 2014 Article A model for non-thermal action of microwave radiation on oxide film/semiconductor structures / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 227-231. — Бібліогр.: 26 назв. — англ. 1560-8034 PACS 78.70.Fy, 78.70.Gq http://dspace.nbuv.gov.ua/handle/123456789/118513 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
A model is considered that explains mechanism of non-thermal action of
microwave radiation on the thin SiO₂ (ТiO₂, Er₂O₃, Gd₂O₃) film/SiC and SiO₂/GaAs
structures. It assumes that the centers of electron-hole recombination are redistributed
because of resonance interaction between dislocations of certain length and microwave
radiation. As a result, additional bands appear in photoluminescence (PL) spectra of the
oxide film/SiC structures or intensities of some bands are redistributed in the PL spectra of
the SiO₂/GaAs structure, as well as optical density of the oxide film/SiC structures changes. |
| format |
Article |
| author |
Okhrimenko, O.B. |
| spellingShingle |
Okhrimenko, O.B. A model for non-thermal action of microwave radiation on oxide film/semiconductor structures Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Okhrimenko, O.B. |
| author_sort |
Okhrimenko, O.B. |
| title |
A model for non-thermal action of microwave radiation on oxide film/semiconductor structures |
| title_short |
A model for non-thermal action of microwave radiation on oxide film/semiconductor structures |
| title_full |
A model for non-thermal action of microwave radiation on oxide film/semiconductor structures |
| title_fullStr |
A model for non-thermal action of microwave radiation on oxide film/semiconductor structures |
| title_full_unstemmed |
A model for non-thermal action of microwave radiation on oxide film/semiconductor structures |
| title_sort |
model for non-thermal action of microwave radiation on oxide film/semiconductor structures |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2014 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118513 |
| citation_txt |
A model for non-thermal action of microwave radiation
on oxide film/semiconductor structures / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 227-231. — Бібліогр.: 26 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT okhrimenkoob amodelfornonthermalactionofmicrowaveradiationonoxidefilmsemiconductorstructures AT okhrimenkoob modelfornonthermalactionofmicrowaveradiationonoxidefilmsemiconductorstructures |
| first_indexed |
2023-10-18T20:32:12Z |
| last_indexed |
2023-10-18T20:32:12Z |
| _version_ |
1796150460780904448 |