Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor
We studied the effect of uniform compression on characteristics of Au–n-Si Schottky barrier diodes made of overcompensated semiconductor. It is shown that overcompensation is caused by formation of structural defects owing to thermal treatment of the initial silicon wafers.
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| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
|---|---|
| Дата: | 2010 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118563 |
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| Цитувати: | Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor / S.I. Vlasov, F.A. Saparov, K.A. Ismailov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 363-365. — Бібліогр.: 10 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118563 |
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irk-123456789-1185632017-05-31T03:05:15Z Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor Vlasov, S.I. Saparov, F.A. Ismailov, K.A. We studied the effect of uniform compression on characteristics of Au–n-Si Schottky barrier diodes made of overcompensated semiconductor. It is shown that overcompensation is caused by formation of structural defects owing to thermal treatment of the initial silicon wafers. 2010 Article Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor / S.I. Vlasov, F.A. Saparov, K.A. Ismailov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 363-365. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 61.72.-y, 85.30.Hi, Kk http://dspace.nbuv.gov.ua/handle/123456789/118563 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
We studied the effect of uniform compression on characteristics of Au–n-Si
Schottky barrier diodes made of overcompensated semiconductor. It is shown that
overcompensation is caused by formation of structural defects owing to thermal
treatment of the initial silicon wafers. |
| format |
Article |
| author |
Vlasov, S.I. Saparov, F.A. Ismailov, K.A. |
| spellingShingle |
Vlasov, S.I. Saparov, F.A. Ismailov, K.A. Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Vlasov, S.I. Saparov, F.A. Ismailov, K.A. |
| author_sort |
Vlasov, S.I. |
| title |
Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor |
| title_short |
Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor |
| title_full |
Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor |
| title_fullStr |
Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor |
| title_full_unstemmed |
Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor |
| title_sort |
effect of pressure on the characteristics of schottky barrier diodes made of overcompensated semiconductor |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2010 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118563 |
| citation_txt |
Effect of pressure on the characteristics of Schottky barrier diodes
made of overcompensated semiconductor / S.I. Vlasov, F.A. Saparov, K.A. Ismailov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 363-365. — Бібліогр.: 10 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:32:13Z |
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