Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys
Glassy alloys of Ge₄₀Te₆₀-xSbx (where x = 2, 4, 6 and 10) were prepared by conventional rapid melt-quenching technique. The nature of the alloys was ascertained through X-ray diffraction pattern of the samples. Thin films of the aforesaid materials could be prepared over the glass substrate by t...
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| Дата: | 2010 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118579 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys / S. Shukla, S. Kumar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 422-425. — Бібліогр.: 26 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118579 |
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dspace |
| spelling |
irk-123456789-1185792017-05-31T03:07:42Z Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys Shukla, S. Kumar, S. Glassy alloys of Ge₄₀Te₆₀-xSbx (where x = 2, 4, 6 and 10) were prepared by conventional rapid melt-quenching technique. The nature of the alloys was ascertained through X-ray diffraction pattern of the samples. Thin films of the aforesaid materials could be prepared over the glass substrate by thermal evaporation technique. Vacuum evaporated indium electrodes were used here to perform electrical measurements. Coplanar structure of thin films was used in this case. The dc electrical conductivity measurements have been carried out. The dark conductivity, pre-exponential factor and activation energy have been calculated for various compositions. It has been found that the dark conductivity and pre-exponential factor increase, while the activation energy decreases with Sb concentration in Ge₄₀Te₆₀-xSbx system. The results can be reserved as an evidence for the chalcogenide nature defects in the above material. 2010 Article Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys / S. Shukla, S. Kumar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 422-425. — Бібліогр.: 26 назв. — англ. 1560-8034 PACS 61.43.Dq, 63.50.Lm, 72.15.Cz http://dspace.nbuv.gov.ua/handle/123456789/118579 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Glassy alloys of Ge₄₀Te₆₀-xSbx (where x = 2, 4, 6 and 10) were prepared by
conventional rapid melt-quenching technique. The nature of the alloys was ascertained
through X-ray diffraction pattern of the samples. Thin films of the aforesaid materials
could be prepared over the glass substrate by thermal evaporation technique. Vacuum
evaporated indium electrodes were used here to perform electrical measurements.
Coplanar structure of thin films was used in this case. The dc electrical conductivity
measurements have been carried out. The dark conductivity, pre-exponential factor and
activation energy have been calculated for various compositions. It has been found that
the dark conductivity and pre-exponential factor increase, while the activation energy
decreases with Sb concentration in Ge₄₀Te₆₀-xSbx system. The results can be reserved
as an evidence for the chalcogenide nature defects in the above material. |
| format |
Article |
| author |
Shukla, S. Kumar, S. |
| spellingShingle |
Shukla, S. Kumar, S. Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Shukla, S. Kumar, S. |
| author_sort |
Shukla, S. |
| title |
Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys |
| title_short |
Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys |
| title_full |
Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys |
| title_fullStr |
Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys |
| title_full_unstemmed |
Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys |
| title_sort |
electrical transport in thin films of glassy ge₄₀te₆₀-xsbx alloys |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2010 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118579 |
| citation_txt |
Electrical transport in thin films of glassy Ge₄₀Te₆₀-xSbx alloys / S. Shukla, S. Kumar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 422-425. — Бібліогр.: 26 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT shuklas electricaltransportinthinfilmsofglassyge40te60xsbxalloys AT kumars electricaltransportinthinfilmsofglassyge40te60xsbxalloys |
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2023-10-18T20:32:33Z |
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2023-10-18T20:32:33Z |
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1796150463440093184 |