Selective unequal-thickness thin-film filters for IR spectral region
A new five-layer structure of the dielectric interference filter for the infra-red region of spectrum is investigated. The main spectral parameters of such a narrow-band filter are determined. The dependence of the transmission band half-width on the thickness of a dividing layer in this system i...
Збережено в:
| Дата: | 2008 |
|---|---|
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118585 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Selective unequal-thickness thin-film filters for IR spectral region / I.Ya. Yaremchuk, V.M. Fitio, Ya.V. Bobitski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 23-25. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | A new five-layer structure of the dielectric interference filter for the infra-red
region of spectrum is investigated. The main spectral parameters of such a narrow-band
filter are determined. The dependence of the transmission band half-width on the
thickness of a dividing layer in this system is investigated. It is shown that, in the case of
the application of PbTe, GeTe, and SnTe layers with a given thickness; their number can
be limited to five at providing the necessary selectivity of the filter: practically the 100-%
transmission at the resonance frequency and 0.005 % outside the transmission band. |
|---|