Photoconversion efficiency of quantum-well solar cells for the optimum doping level of a base
Analytical expressions for the maximum obtainable photoconversion efficiency of quantum-well solar cells (QWSCs) under AM0 conditions are given. The modeling of the photoconversion efficiency of QWSCs under AM1.5 conditions using the SimWindows program is fulfilled. It is shown that the photoc...
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| Дата: | 2008 |
|---|---|
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118590 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photoconversion efficiency of quantum-well solar cells for the optimum doping level of a base / A.V. Sachenko, I.O. Sokolovskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 1-5. — Бібліогр.: 7 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1185902017-05-31T03:04:06Z Photoconversion efficiency of quantum-well solar cells for the optimum doping level of a base Sachenko, A.V. Sokolovskyi, I.O. Analytical expressions for the maximum obtainable photoconversion efficiency of quantum-well solar cells (QWSCs) under AM0 conditions are given. The modeling of the photoconversion efficiency of QWSCs under AM1.5 conditions using the SimWindows program is fulfilled. It is shown that the photoconversion efficiency of QWSCs with the A₃B₅ p-i-n structure is rather low because of a low photovoltage value. To improve this situation, the base region should be doped heavily enough. Light concentration makes it possible to realize high photoconversion efficiencies for A₃B₅ quantum-well p-i-n structures with a low background level of the base region doping. Their values are comparable to the photoconversion efficiencies for solar cells (SCs) with rather high base region doping levels. 2008 Article Photoconversion efficiency of quantum-well solar cells for the optimum doping level of a base / A.V. Sachenko, I.O. Sokolovskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 1-5. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 73.63.Hs, 84.60.Jt, 71.55.Cn, 71.55.Eq http://dspace.nbuv.gov.ua/handle/123456789/118590 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Analytical expressions for the maximum obtainable photoconversion
efficiency of quantum-well solar cells (QWSCs) under AM0 conditions are given. The
modeling of the photoconversion efficiency of QWSCs under AM1.5 conditions using
the SimWindows program is fulfilled. It is shown that the photoconversion efficiency of
QWSCs with the A₃B₅ p-i-n structure is rather low because of a low photovoltage value.
To improve this situation, the base region should be doped heavily enough. Light
concentration makes it possible to realize high photoconversion efficiencies for A₃B₅
quantum-well p-i-n structures with a low background level of the base region doping.
Their values are comparable to the photoconversion efficiencies for solar cells (SCs) with
rather high base region doping levels. |
| format |
Article |
| author |
Sachenko, A.V. Sokolovskyi, I.O. |
| spellingShingle |
Sachenko, A.V. Sokolovskyi, I.O. Photoconversion efficiency of quantum-well solar cells for the optimum doping level of a base Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Sachenko, A.V. Sokolovskyi, I.O. |
| author_sort |
Sachenko, A.V. |
| title |
Photoconversion efficiency of quantum-well solar cells for the optimum doping level of a base |
| title_short |
Photoconversion efficiency of quantum-well solar cells for the optimum doping level of a base |
| title_full |
Photoconversion efficiency of quantum-well solar cells for the optimum doping level of a base |
| title_fullStr |
Photoconversion efficiency of quantum-well solar cells for the optimum doping level of a base |
| title_full_unstemmed |
Photoconversion efficiency of quantum-well solar cells for the optimum doping level of a base |
| title_sort |
photoconversion efficiency of quantum-well solar cells for the optimum doping level of a base |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2008 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118590 |
| citation_txt |
Photoconversion efficiency of quantum-well solar cells for the optimum doping level of a base / A.V. Sachenko, I.O. Sokolovskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 1-5. — Бібліогр.: 7 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT sachenkoav photoconversionefficiencyofquantumwellsolarcellsfortheoptimumdopinglevelofabase AT sokolovskyiio photoconversionefficiencyofquantumwellsolarcellsfortheoptimumdopinglevelofabase |
| first_indexed |
2023-10-18T20:32:34Z |
| last_indexed |
2023-10-18T20:32:34Z |
| _version_ |
1796150477250887680 |