Effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures
We present the results of investigations of the effect caused by low magnetic field treatment on InP single crystals impurity-defect composition. This effect was found when studying the radiative recombination (luminescence) spectra in the 0.6-2.5 µm range at 77 K. The static magnet with B = 0.44...
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| Дата: | 2009 |
|---|---|
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118606 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures / R. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 83-85. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118606 |
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dspace |
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irk-123456789-1186062017-05-31T03:10:05Z Effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures Red’ko, R. R. We present the results of investigations of the effect caused by low magnetic field treatment on InP single crystals impurity-defect composition. This effect was found when studying the radiative recombination (luminescence) spectra in the 0.6-2.5 µm range at 77 K. The static magnet with B = 0.44 T was used as a source of magnetic field. We studied samples of two groups: porous InP crystals and epitaxial layers grown on porous substrate. The crystals of both groups were not specially doped. It has been obtained that treatment even for 0.02 min resulted in considerable changes in luminescence spectra. The luminescence intensities after treatment increase at first, but later behavior is nonmonotonic: next treatment can result in decrease or increase a value of intensities of both observed bands. It should be noted that the luminescence intensities of epitaxial layers, perhaps, changed as well as concentration of nonradiative centers changed. But for porous indium phosphide, these features were not observed. 2009 Article Effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures / R. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 83-85. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 68.55.-a, 71.55.Eq, 78.55.Et http://dspace.nbuv.gov.ua/handle/123456789/118606 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
We present the results of investigations of the effect caused by low magnetic
field treatment on InP single crystals impurity-defect composition. This effect was found
when studying the radiative recombination (luminescence) spectra in the 0.6-2.5 µm
range at 77 K. The static magnet with B = 0.44 T was used as a source of magnetic field.
We studied samples of two groups: porous InP crystals and epitaxial layers grown on
porous substrate. The crystals of both groups were not specially doped. It has been
obtained that treatment even for 0.02 min resulted in considerable changes in
luminescence spectra. The luminescence intensities after treatment increase at first, but
later behavior is nonmonotonic: next treatment can result in decrease or increase a value
of intensities of both observed bands. It should be noted that the luminescence intensities
of epitaxial layers, perhaps, changed as well as concentration of nonradiative centers
changed. But for porous indium phosphide, these features were not observed. |
| format |
Article |
| author |
Red’ko, R. R. |
| spellingShingle |
Red’ko, R. R. Effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Red’ko, R. R. |
| author_sort |
Red’ko, R. R. |
| title |
Effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures |
| title_short |
Effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures |
| title_full |
Effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures |
| title_fullStr |
Effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures |
| title_full_unstemmed |
Effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures |
| title_sort |
effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2009 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118606 |
| citation_txt |
Effect of low magnetic field treatment on spectra of radiative recombination centers in indium phosphide structures / R. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 83-85. — Бібліогр.: 11 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:32:37Z |
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1796150477999570944 |