Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions
In this paper, we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺ and C⁺ ions. The implanting fluencies were chosen in such a way that the peak concentration of excess Si and C of 5-10 at.% were achieved. Effe...
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| Дата: | 2009 |
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| Автори: | , , , , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118612 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions / A.N. Nazarov, I.N. Osiyuk, S.I. Tiagulskyi, V.S. Lysenko, I.P. Tyagulskyy, V.N. Torbin, V.V. Omelchuk, T.M. Nazarova, L. Rebohle, W. Skorupa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 98-104 — Бібліогр.: 26 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1186122017-05-31T03:10:06Z Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions Nazarov, A.N. Osiyuk, I.N. Tiagulskyi, S.I. Lysenko, V.S. Tyagulskyy, I.P. Torbin, V.N. Omelchuk, V.V. Nazarova, T.M. Rebohle, L. Skorupa, W. In this paper, we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺ and C⁺ ions. The implanting fluencies were chosen in such a way that the peak concentration of excess Si and C of 5-10 at.% were achieved. Effect of hydrogen plasma treatment on electroluminescence and durability of SiO2 (Si,C) - Si-system is studied. Combined measurements of charge trapping and EL intensity as a function of the injected charge and current have been carried out with the aim of clarifying the mechanisms of electroluminescence. EL was demonstrated to have defect-related nature. Cross-sections of both electron traps and hole traps were determined. EL quenching at great levels of injected charge is associated with strong negative charge capture, following capture of positive charge leading to electrical breakdown of SiO₂ structures. 2009 Article Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions / A.N. Nazarov, I.N. Osiyuk, S.I. Tiagulskyi, V.S. Lysenko, I.P. Tyagulskyy, V.N. Torbin, V.V. Omelchuk, T.M. Nazarova, L. Rebohle, W. Skorupa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 98-104 — Бібліогр.: 26 назв. — англ. 1560-8034 PACS 68.35,78.55 http://dspace.nbuv.gov.ua/handle/123456789/118612 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
In this paper, we explore the electrophysical and electroluminescence (EL)
properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺
and C⁺
ions. The implanting fluencies were chosen in such a way that the peak concentration of
excess Si and C of 5-10 at.% were achieved. Effect of hydrogen plasma treatment on
electroluminescence and durability of SiO2 (Si,C) - Si-system is studied. Combined
measurements of charge trapping and EL intensity as a function of the injected charge
and current have been carried out with the aim of clarifying the mechanisms of
electroluminescence. EL was demonstrated to have defect-related nature. Cross-sections
of both electron traps and hole traps were determined. EL quenching at great levels of
injected charge is associated with strong negative charge capture, following capture of
positive charge leading to electrical breakdown of SiO₂ structures. |
| format |
Article |
| author |
Nazarov, A.N. Osiyuk, I.N. Tiagulskyi, S.I. Lysenko, V.S. Tyagulskyy, I.P. Torbin, V.N. Omelchuk, V.V. Nazarova, T.M. Rebohle, L. Skorupa, W. |
| spellingShingle |
Nazarov, A.N. Osiyuk, I.N. Tiagulskyi, S.I. Lysenko, V.S. Tyagulskyy, I.P. Torbin, V.N. Omelchuk, V.V. Nazarova, T.M. Rebohle, L. Skorupa, W. Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Nazarov, A.N. Osiyuk, I.N. Tiagulskyi, S.I. Lysenko, V.S. Tyagulskyy, I.P. Torbin, V.N. Omelchuk, V.V. Nazarova, T.M. Rebohle, L. Skorupa, W. |
| author_sort |
Nazarov, A.N. |
| title |
Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions |
| title_short |
Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions |
| title_full |
Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions |
| title_fullStr |
Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions |
| title_full_unstemmed |
Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions |
| title_sort |
erratum: electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2009 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118612 |
| citation_txt |
Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions / A.N. Nazarov, I.N. Osiyuk, S.I. Tiagulskyi, V.S. Lysenko, I.P. Tyagulskyy, V.N. Torbin, V.V. Omelchuk, T.M. Nazarova, L. Rebohle, W. Skorupa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 98-104 — Бібліогр.: 26 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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