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Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model

In this paper we have investigated thermoelectric effect in the epitaxial graphene on a semiconductor substrate using a simple model. We have obtained the expressions for static conductance and thermopower of the epitaxial graphene. The thermopower of the epitaxial graphene can be abnormally large...

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Main Author: Alisultanov, Z.Z.
Format: Article
Language:English
Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2013
Series:Физика низких температур
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Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118667
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spelling irk-123456789-1186672017-05-31T03:04:29Z Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model Alisultanov, Z.Z. Электронные свойства проводящих систем In this paper we have investigated thermoelectric effect in the epitaxial graphene on a semiconductor substrate using a simple model. We have obtained the expressions for static conductance and thermopower of the epitaxial graphene. The thermopower of the epitaxial graphene can be abnormally large near the edges of the semiconductor band gap. 2013 Article Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model / Z.Z. Alisultanov // Физика низких температур. — 2013. — Т. 39, № 7. — С. 767–770. — Бібліогр.: 22 назв. — англ. 0132-6414 PACS: 68.43.–h, 72.80.Vp, 65.80.Ck http://dspace.nbuv.gov.ua/handle/123456789/118667 en Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
topic Электронные свойства проводящих систем
Электронные свойства проводящих систем
spellingShingle Электронные свойства проводящих систем
Электронные свойства проводящих систем
Alisultanov, Z.Z.
Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model
Физика низких температур
description In this paper we have investigated thermoelectric effect in the epitaxial graphene on a semiconductor substrate using a simple model. We have obtained the expressions for static conductance and thermopower of the epitaxial graphene. The thermopower of the epitaxial graphene can be abnormally large near the edges of the semiconductor band gap.
format Article
author Alisultanov, Z.Z.
author_facet Alisultanov, Z.Z.
author_sort Alisultanov, Z.Z.
title Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model
title_short Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model
title_full Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model
title_fullStr Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model
title_full_unstemmed Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model
title_sort thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. simple analytical model
publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
publishDate 2013
topic_facet Электронные свойства проводящих систем
url http://dspace.nbuv.gov.ua/handle/123456789/118667
citation_txt Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model / Z.Z. Alisultanov // Физика низких температур. — 2013. — Т. 39, № 7. — С. 767–770. — Бібліогр.: 22 назв. — англ.
series Физика низких температур
work_keys_str_mv AT alisultanovzz thermoelectriceffectinsinglelayerepitaxialgrapheneformedonsemiconductorsubstratesimpleanalyticalmodel
first_indexed 2023-10-18T20:32:43Z
last_indexed 2023-10-18T20:32:43Z
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