Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model
In this paper we have investigated thermoelectric effect in the epitaxial graphene on a semiconductor substrate using a simple model. We have obtained the expressions for static conductance and thermopower of the epitaxial graphene. The thermopower of the epitaxial graphene can be abnormally large...
Збережено в:
| Видавець: | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
|---|---|
| Дата: | 2013 |
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2013
|
| Назва видання: | Физика низких температур |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118667 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Цитувати: | Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model / Z.Z. Alisultanov // Физика низких температур. — 2013. — Т. 39, № 7. — С. 767–770. — Бібліогр.: 22 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118667 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1186672017-05-31T03:04:29Z Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model Alisultanov, Z.Z. Электронные свойства проводящих систем In this paper we have investigated thermoelectric effect in the epitaxial graphene on a semiconductor substrate using a simple model. We have obtained the expressions for static conductance and thermopower of the epitaxial graphene. The thermopower of the epitaxial graphene can be abnormally large near the edges of the semiconductor band gap. 2013 Article Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model / Z.Z. Alisultanov // Физика низких температур. — 2013. — Т. 39, № 7. — С. 767–770. — Бібліогр.: 22 назв. — англ. 0132-6414 PACS: 68.43.–h, 72.80.Vp, 65.80.Ck http://dspace.nbuv.gov.ua/handle/123456789/118667 en Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Электронные свойства проводящих систем Электронные свойства проводящих систем |
| spellingShingle |
Электронные свойства проводящих систем Электронные свойства проводящих систем Alisultanov, Z.Z. Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model Физика низких температур |
| description |
In this paper we have investigated thermoelectric effect in the epitaxial graphene on a semiconductor substrate
using a simple model. We have obtained the expressions for static conductance and thermopower of the
epitaxial graphene. The thermopower of the epitaxial graphene can be abnormally large near the edges of the
semiconductor band gap. |
| format |
Article |
| author |
Alisultanov, Z.Z. |
| author_facet |
Alisultanov, Z.Z. |
| author_sort |
Alisultanov, Z.Z. |
| title |
Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model |
| title_short |
Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model |
| title_full |
Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model |
| title_fullStr |
Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model |
| title_full_unstemmed |
Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model |
| title_sort |
thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. simple analytical model |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| publishDate |
2013 |
| topic_facet |
Электронные свойства проводящих систем |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118667 |
| citation_txt |
Thermoelectric effect in single layer epitaxial graphene
formed on semiconductor substrate.
Simple analytical model / Z.Z. Alisultanov // Физика низких температур. — 2013. — Т. 39, № 7. — С. 767–770. — Бібліогр.: 22 назв. — англ. |
| series |
Физика низких температур |
| work_keys_str_mv |
AT alisultanovzz thermoelectriceffectinsinglelayerepitaxialgrapheneformedonsemiconductorsubstratesimpleanalyticalmodel |
| first_indexed |
2023-10-18T20:32:43Z |
| last_indexed |
2023-10-18T20:32:43Z |
| _version_ |
1796150483425951744 |