High-frequency properties of systems with drifting electrons and polar optical phonons
An analysis of interaction between drifting electrons and optical phonons in semiconductors is presented. Three physical systems are studied: three-dimensional electron gas (3DEG) in bulk material; two-dimensional electron gas (2DEG) in a quantum well, and two-dimensional electron gas in a quantu...
Збережено в:
| Дата: | 2008 |
|---|---|
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118668 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | High-frequency properties of systems with drifting electrons and polar optical phonons / S.M. Kukhtaruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 43-49. — Бібліогр.: 18 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1186682017-05-31T03:04:11Z High-frequency properties of systems with drifting electrons and polar optical phonons Kukhtaruk, S.M. An analysis of interaction between drifting electrons and optical phonons in semiconductors is presented. Three physical systems are studied: three-dimensional electron gas (3DEG) in bulk material; two-dimensional electron gas (2DEG) in a quantum well, and two-dimensional electron gas in a quantum well under a metal electrode. The Euler and Poisson equations are used for studying the electron subsystem. Interaction between electrons and polar optical phonons are taken into consideration using a frequency dependence of the dielectric permittivity. As a result, the dispersion equations that describe self-consistent collective oscillations of plasmons and optical phonons are deduced. We found that interaction between electrons and optical phonons leads to instability of the electron subsystem. The considered physical systems are capable to be used as a generator or amplifier of the electromagnetic radiation in the 10 THz frequency range. The effect of instability is suppressed if damping of optical phonons and plasma oscillations is essentially strong. 2008 Article High-frequency properties of systems with drifting electrons and polar optical phonons / S.M. Kukhtaruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 43-49. — Бібліогр.: 18 назв. — англ. 1560-8034 PACS 71.38.-k http://dspace.nbuv.gov.ua/handle/123456789/118668 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
An analysis of interaction between drifting electrons and optical phonons in
semiconductors is presented. Three physical systems are studied: three-dimensional
electron gas (3DEG) in bulk material; two-dimensional electron gas (2DEG) in a
quantum well, and two-dimensional electron gas in a quantum well under a metal
electrode. The Euler and Poisson equations are used for studying the electron subsystem.
Interaction between electrons and polar optical phonons are taken into consideration
using a frequency dependence of the dielectric permittivity. As a result, the dispersion
equations that describe self-consistent collective oscillations of plasmons and optical
phonons are deduced. We found that interaction between electrons and optical phonons
leads to instability of the electron subsystem. The considered physical systems are
capable to be used as a generator or amplifier of the electromagnetic radiation in the 10
THz frequency range. The effect of instability is suppressed if damping of optical
phonons and plasma oscillations is essentially strong. |
| format |
Article |
| author |
Kukhtaruk, S.M. |
| spellingShingle |
Kukhtaruk, S.M. High-frequency properties of systems with drifting electrons and polar optical phonons Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Kukhtaruk, S.M. |
| author_sort |
Kukhtaruk, S.M. |
| title |
High-frequency properties of systems with drifting electrons and polar optical phonons |
| title_short |
High-frequency properties of systems with drifting electrons and polar optical phonons |
| title_full |
High-frequency properties of systems with drifting electrons and polar optical phonons |
| title_fullStr |
High-frequency properties of systems with drifting electrons and polar optical phonons |
| title_full_unstemmed |
High-frequency properties of systems with drifting electrons and polar optical phonons |
| title_sort |
high-frequency properties of systems with drifting electrons and polar optical phonons |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2008 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118668 |
| citation_txt |
High-frequency properties of systems with drifting electrons and polar optical phonons / S.M. Kukhtaruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 43-49. — Бібліогр.: 18 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT kukhtaruksm highfrequencypropertiesofsystemswithdriftingelectronsandpolaropticalphonons |
| first_indexed |
2023-10-18T20:32:49Z |
| last_indexed |
2023-10-18T20:32:49Z |
| _version_ |
1796150483531857920 |