Electrophysical properties of SmxPb₁₋xTe solid solutions
The electrophysical properties of SmxPb₁₋xTe (x ≤ 0.08) solid solutions have been investigated. The electric conductivity, Hall coefficient and Hall mobility of charge carriers in the temperature range 80 to 800 К have been measured. The mechanism of charge carrier scattering in solid solutions h...
Збережено в:
| Дата: | 2009 |
|---|---|
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118688 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electrophysical properties of SmxPb₁₋xTe solid solutions / H.A. Hasanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 135-137. — Бібліогр.: 5 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The electrophysical properties of SmxPb₁₋xTe (x ≤ 0.08) solid solutions have
been investigated. The electric conductivity, Hall coefficient and Hall mobility of charge
carriers in the temperature range 80 to 800 К have been measured. The mechanism of
charge carrier scattering in solid solutions has been ascertained. It is established that
increase of samarium content and simultaneous participation of interacting Sm²⁺ and
Sm³⁺ ions in the transfer process lead to decrease in electric conductivity. The change of
conductivity type from p- to n-type means that obtained solid solutions are partly
compensated semiconductors. |
|---|