Electrophysical properties of SmxPb₁₋xTe solid solutions
The electrophysical properties of SmxPb₁₋xTe (x ≤ 0.08) solid solutions have been investigated. The electric conductivity, Hall coefficient and Hall mobility of charge carriers in the temperature range 80 to 800 К have been measured. The mechanism of charge carrier scattering in solid solutions h...
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| Дата: | 2009 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118688 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electrophysical properties of SmxPb₁₋xTe solid solutions / H.A. Hasanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 135-137. — Бібліогр.: 5 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1186882017-05-31T03:06:24Z Electrophysical properties of SmxPb₁₋xTe solid solutions Hasanov, H.A. The electrophysical properties of SmxPb₁₋xTe (x ≤ 0.08) solid solutions have been investigated. The electric conductivity, Hall coefficient and Hall mobility of charge carriers in the temperature range 80 to 800 К have been measured. The mechanism of charge carrier scattering in solid solutions has been ascertained. It is established that increase of samarium content and simultaneous participation of interacting Sm²⁺ and Sm³⁺ ions in the transfer process lead to decrease in electric conductivity. The change of conductivity type from p- to n-type means that obtained solid solutions are partly compensated semiconductors. 2009 Article Electrophysical properties of SmxPb₁₋xTe solid solutions / H.A. Hasanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 135-137. — Бібліогр.: 5 назв. — англ. 1560-8034 PACS 72.10.Di, 72.20.Dp, My http://dspace.nbuv.gov.ua/handle/123456789/118688 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The electrophysical properties of SmxPb₁₋xTe (x ≤ 0.08) solid solutions have
been investigated. The electric conductivity, Hall coefficient and Hall mobility of charge
carriers in the temperature range 80 to 800 К have been measured. The mechanism of
charge carrier scattering in solid solutions has been ascertained. It is established that
increase of samarium content and simultaneous participation of interacting Sm²⁺ and
Sm³⁺ ions in the transfer process lead to decrease in electric conductivity. The change of
conductivity type from p- to n-type means that obtained solid solutions are partly
compensated semiconductors. |
| format |
Article |
| author |
Hasanov, H.A. |
| spellingShingle |
Hasanov, H.A. Electrophysical properties of SmxPb₁₋xTe solid solutions Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Hasanov, H.A. |
| author_sort |
Hasanov, H.A. |
| title |
Electrophysical properties of SmxPb₁₋xTe solid solutions |
| title_short |
Electrophysical properties of SmxPb₁₋xTe solid solutions |
| title_full |
Electrophysical properties of SmxPb₁₋xTe solid solutions |
| title_fullStr |
Electrophysical properties of SmxPb₁₋xTe solid solutions |
| title_full_unstemmed |
Electrophysical properties of SmxPb₁₋xTe solid solutions |
| title_sort |
electrophysical properties of smxpb₁₋xte solid solutions |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2009 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118688 |
| citation_txt |
Electrophysical properties of SmxPb₁₋xTe solid solutions / H.A. Hasanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 135-137. — Бібліогр.: 5 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT hasanovha electrophysicalpropertiesofsmxpb1xtesolidsolutions |
| first_indexed |
2023-10-18T20:32:51Z |
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2023-10-18T20:32:51Z |
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1796150485441314816 |