Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system
A data acquisition, parameter extraction and characterization system for electronic active components is presented in this paper. High sensitivity measuring equipments were used for data acquisition and effective extraction models based on optimization techniques developed to obtain the parameter...
Збережено в:
| Дата: | 2009 |
|---|---|
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118694 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system / H. Bourdoucen and A. Zitouni // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 178-186. — Бібліогр.: 17 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118694 |
|---|---|
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irk-123456789-1186942017-05-31T03:05:37Z Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system Bourdoucen, H. Zitouni, A. A data acquisition, parameter extraction and characterization system for electronic active components is presented in this paper. High sensitivity measuring equipments were used for data acquisition and effective extraction models based on optimization techniques developed to obtain the parameters of p-n junction diodes, Schottky diodes, field effect transistors and bipolar junction transistors. The performance of the developed extraction techniques are apparent via comparing experimental data with Spice simulated data using the model parameter that is graphically extracted and also those extracted using optimization techniques. The performance of the developed extraction techniques has been demonstrated by comparing the experimental characteristics with Spice simulated curves using default parameters and model parameters extracted using graphical and optimization techniques. The relative excursions of the simulated I-V characteristics of most investigated devices were less than 2.5 % with respect to the experimental curves, which shows the accuracy and effectiveness of the developed system. A number of software routines have also been implemented under Matlab environment to extract the Spice model parameters for different electronic devices. 2009 Article Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system / H. Bourdoucen and A. Zitouni // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 178-186. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS 85.30.Hi, Kk, Pq, Tv http://dspace.nbuv.gov.ua/handle/123456789/118694 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
A data acquisition, parameter extraction and characterization system for
electronic active components is presented in this paper. High sensitivity measuring
equipments were used for data acquisition and effective extraction models based on
optimization techniques developed to obtain the parameters of p-n junction diodes,
Schottky diodes, field effect transistors and bipolar junction transistors. The performance
of the developed extraction techniques are apparent via comparing experimental data
with Spice simulated data using the model parameter that is graphically extracted and
also those extracted using optimization techniques. The performance of the developed
extraction techniques has been demonstrated by comparing the experimental
characteristics with Spice simulated curves using default parameters and model
parameters extracted using graphical and optimization techniques. The relative
excursions of the simulated I-V characteristics of most investigated devices were less
than 2.5 % with respect to the experimental curves, which shows the accuracy and
effectiveness of the developed system. A number of software routines have also been
implemented under Matlab environment to extract the Spice model parameters for
different electronic devices. |
| format |
Article |
| author |
Bourdoucen, H. Zitouni, A. |
| spellingShingle |
Bourdoucen, H. Zitouni, A. Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Bourdoucen, H. Zitouni, A. |
| author_sort |
Bourdoucen, H. |
| title |
Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system |
| title_short |
Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system |
| title_full |
Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system |
| title_fullStr |
Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system |
| title_full_unstemmed |
Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system |
| title_sort |
data acquisition, parameter extraction and characterization of active components using integrated instrumentation system |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2009 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118694 |
| citation_txt |
Data acquisition, parameter extraction and characterization of active
components using integrated instrumentation system / H. Bourdoucen and A. Zitouni // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 178-186. — Бібліогр.: 17 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT bourdoucenh dataacquisitionparameterextractionandcharacterizationofactivecomponentsusingintegratedinstrumentationsystem AT zitounia dataacquisitionparameterextractionandcharacterizationofactivecomponentsusingintegratedinstrumentationsystem |
| first_indexed |
2023-10-18T20:32:52Z |
| last_indexed |
2023-10-18T20:32:52Z |
| _version_ |
1796150486074654720 |