X-ray dosimetry of copper-doped CdGa₂S₄ single crystals
Comparative analysis of the X-ray dosimetric characteristics of CdGa₂S₄ and CdGa₂S₄<Cu> single crystals demonstrates that after copper-doping the persistence of the crystal characteristics completely disappears. The current-dose characteristics Ir ~ E tend to linearity (α = 1) at low dos...
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| Дата: | 2012 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118727 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | X-ray dosimetry of copper-doped CdGa₂S₄ single crystals / S.N. Mustafaeva, M.M. Asadov, D.T. Guseinov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 358-359. — Бібліогр.: 4 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118727 |
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dspace |
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irk-123456789-1187272017-06-01T03:05:10Z X-ray dosimetry of copper-doped CdGa₂S₄ single crystals Mustafaeva, S.N. Asadov, M.M. Guseinov, D.T. Comparative analysis of the X-ray dosimetric characteristics of CdGa₂S₄ and CdGa₂S₄<Cu> single crystals demonstrates that after copper-doping the persistence of the crystal characteristics completely disappears. The current-dose characteristics Ir ~ E tend to linearity (α = 1) at low dose rates of X-rays. At high dose rates, α tends to 0.5, which testifies to the mechanism of quadratic recombination of charge carriers generated by X-rays in CdGa₂S₄<Cu>. 2012 Article X-ray dosimetry of copper-doped CdGa₂S₄ single crystals / S.N. Mustafaeva, M.M. Asadov, D.T. Guseinov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 358-359. — Бібліогр.: 4 назв. — англ. 1560-8034 http://dspace.nbuv.gov.ua/handle/123456789/118727 PACS 71.20.Nr, 72.15.Cz, 72.20.Jv, 72.80.Jc en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Comparative analysis of the X-ray dosimetric characteristics of CdGa₂S₄ and
CdGa₂S₄<Cu> single crystals demonstrates that after copper-doping the persistence of the
crystal characteristics completely disappears. The current-dose characteristics Ir ~ E
tend to linearity (α = 1) at low dose rates of X-rays. At high dose rates, α tends to 0.5,
which testifies to the mechanism of quadratic recombination of charge carriers generated
by X-rays in CdGa₂S₄<Cu>. |
| format |
Article |
| author |
Mustafaeva, S.N. Asadov, M.M. Guseinov, D.T. |
| spellingShingle |
Mustafaeva, S.N. Asadov, M.M. Guseinov, D.T. X-ray dosimetry of copper-doped CdGa₂S₄ single crystals Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Mustafaeva, S.N. Asadov, M.M. Guseinov, D.T. |
| author_sort |
Mustafaeva, S.N. |
| title |
X-ray dosimetry of copper-doped CdGa₂S₄ single crystals |
| title_short |
X-ray dosimetry of copper-doped CdGa₂S₄ single crystals |
| title_full |
X-ray dosimetry of copper-doped CdGa₂S₄ single crystals |
| title_fullStr |
X-ray dosimetry of copper-doped CdGa₂S₄ single crystals |
| title_full_unstemmed |
X-ray dosimetry of copper-doped CdGa₂S₄ single crystals |
| title_sort |
x-ray dosimetry of copper-doped cdga₂s₄ single crystals |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2012 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118727 |
| citation_txt |
X-ray dosimetry of copper-doped CdGa₂S₄ single crystals / S.N. Mustafaeva, M.M. Asadov, D.T. Guseinov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 358-359. — Бібліогр.: 4 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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| first_indexed |
2023-10-18T20:32:16Z |
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2023-10-18T20:32:16Z |
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