Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates
Current-voltage characteristics, spectral dependences of photovoltage and short-circuit current of the structures based on porous silicon at adsorption of iodine molecules are presented. It is revealed widening the spectral range of photosensitivity in the samples in short-wavelength range as com...
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| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
|---|---|
| Дата: | 2012 |
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118731 |
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| Цитувати: | Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates / І.B. Olenych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 382-385. — Бібліогр.: 16 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118731 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1187312017-06-01T03:04:57Z Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates Olenych, І.B. Current-voltage characteristics, spectral dependences of photovoltage and short-circuit current of the structures based on porous silicon at adsorption of iodine molecules are presented. It is revealed widening the spectral range of photosensitivity in the samples in short-wavelength range as compared with that of single crystal silicon. Kinetics of the photovoltage response inherent to the porous silicon-silicon structures has been investigated. The results are explained in the frame of qualitative model that involves formation of p-n-transitions in these structures as a result of inversion of the conductivity type in porous silicon nanocrystals under the influence of adsorption of molecular iodine 2012 Article Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates / І.B. Olenych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 382-385. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS 73.50.Pz, 73.63.-b http://dspace.nbuv.gov.ua/handle/123456789/118731 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Current-voltage characteristics, spectral dependences of photovoltage and
short-circuit current of the structures based on porous silicon at adsorption of iodine
molecules are presented. It is revealed widening the spectral range of photosensitivity in
the samples in short-wavelength range as compared with that of single crystal silicon.
Kinetics of the photovoltage response inherent to the porous silicon-silicon structures has
been investigated. The results are explained in the frame of qualitative model that
involves formation of p-n-transitions in these structures as a result of inversion of the
conductivity type in porous silicon nanocrystals under the influence of adsorption of
molecular iodine |
| format |
Article |
| author |
Olenych, І.B. |
| spellingShingle |
Olenych, І.B. Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Olenych, І.B. |
| author_sort |
Olenych, І.B. |
| title |
Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates |
| title_short |
Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates |
| title_full |
Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates |
| title_fullStr |
Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates |
| title_full_unstemmed |
Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates |
| title_sort |
electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2012 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118731 |
| citation_txt |
Electrical and photoelectrical properties of iodine modified porous silicon on silicon substrates / І.B. Olenych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 382-385. — Бібліогр.: 16 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT olenychíb electricalandphotoelectricalpropertiesofiodinemodifiedporoussilicononsiliconsubstrates |
| first_indexed |
2023-10-18T20:32:17Z |
| last_indexed |
2023-10-18T20:32:17Z |
| _version_ |
1796150465237352448 |