The study of solar cells with back side contacts at low illumination

The study of solar cells with back side contacts at low illumination

Theoretical analysis and experimental research of Si solar cells (SC) with interdigitated back side contacts (BSC) photovoltaic parameters and photoconversion efficiency at low light level have been done in presence of floating p⁺-n junctions and isotype n⁺-n junctions on frontal (illuminated) su...

Повний опис

Збережено в:
Бібліографічні деталі
Дата:2010
Автори: Gorban, A.P., Kostylyov, V.P., Litovchenko, V.G., Sachenko, A.V., Serba, A.A., Sokolovskyi, I.O., Chernenko, V.V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118734
Теги: Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:The study of solar cells with back side contacts at low illumination / A.P. Gorban, V.P. Kostylyov, V.G. Litovchenko, A.V. Sachenko, A.A. Serba, I.O. Sokolovskyi, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 348-352. — Бібліогр.: 7 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-118734
record_format dspace
spelling irk-123456789-1187342017-06-01T03:04:42Z The study of solar cells with back side contacts at low illumination Gorban, A.P. Kostylyov, V.P. Litovchenko, V.G. Sachenko, A.V. Serba, A.A. Sokolovskyi, I.O. Chernenko, V.V. Theoretical analysis and experimental research of Si solar cells (SC) with interdigitated back side contacts (BSC) photovoltaic parameters and photoconversion efficiency at low light level have been done in presence of floating p⁺-n junctions and isotype n⁺-n junctions on frontal (illuminated) surface. It has been found that in case of floating junction the magnitudes of short-circuit current, open-circuit voltage and efficiency, as well as of internal quantum efficiency of photocurrent can decrease significantly due to recombination in the space charge region (SCR) rather than to surface recombination. In case of isotype junction, this decrease is absent. These results allow to conclude that the floating p⁺-n junctions at the front surface of the silicon BSC SC would be appropriate for use only in case of an illumination intensity ≥ 1000 W/m². 2010 Article The study of solar cells with back side contacts at low illumination / A.P. Gorban, V.P. Kostylyov, V.G. Litovchenko, A.V. Sachenko, A.A. Serba, I.O. Sokolovskyi, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 348-352. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 72.20.Jv, 88.40.hj, jj http://dspace.nbuv.gov.ua/handle/123456789/118734 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Theoretical analysis and experimental research of Si solar cells (SC) with interdigitated back side contacts (BSC) photovoltaic parameters and photoconversion efficiency at low light level have been done in presence of floating p⁺-n junctions and isotype n⁺-n junctions on frontal (illuminated) surface. It has been found that in case of floating junction the magnitudes of short-circuit current, open-circuit voltage and efficiency, as well as of internal quantum efficiency of photocurrent can decrease significantly due to recombination in the space charge region (SCR) rather than to surface recombination. In case of isotype junction, this decrease is absent. These results allow to conclude that the floating p⁺-n junctions at the front surface of the silicon BSC SC would be appropriate for use only in case of an illumination intensity ≥ 1000 W/m².
format Article
author Gorban, A.P.
Kostylyov, V.P.
Litovchenko, V.G.
Sachenko, A.V.
Serba, A.A.
Sokolovskyi, I.O.
Chernenko, V.V.
spellingShingle Gorban, A.P.
Kostylyov, V.P.
Litovchenko, V.G.
Sachenko, A.V.
Serba, A.A.
Sokolovskyi, I.O.
Chernenko, V.V.
The study of solar cells with back side contacts at low illumination
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Gorban, A.P.
Kostylyov, V.P.
Litovchenko, V.G.
Sachenko, A.V.
Serba, A.A.
Sokolovskyi, I.O.
Chernenko, V.V.
author_sort Gorban, A.P.
title The study of solar cells with back side contacts at low illumination
title_short The study of solar cells with back side contacts at low illumination
title_full The study of solar cells with back side contacts at low illumination
title_fullStr The study of solar cells with back side contacts at low illumination
title_full_unstemmed The study of solar cells with back side contacts at low illumination
title_sort study of solar cells with back side contacts at low illumination
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2010
url http://dspace.nbuv.gov.ua/handle/123456789/118734
citation_txt The study of solar cells with back side contacts at low illumination / A.P. Gorban, V.P. Kostylyov, V.G. Litovchenko, A.V. Sachenko, A.A. Serba, I.O. Sokolovskyi, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 348-352. — Бібліогр.: 7 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT gorbanap thestudyofsolarcellswithbacksidecontactsatlowillumination
AT kostylyovvp thestudyofsolarcellswithbacksidecontactsatlowillumination
AT litovchenkovg thestudyofsolarcellswithbacksidecontactsatlowillumination
AT sachenkoav thestudyofsolarcellswithbacksidecontactsatlowillumination
AT serbaaa thestudyofsolarcellswithbacksidecontactsatlowillumination
AT sokolovskyiio thestudyofsolarcellswithbacksidecontactsatlowillumination
AT chernenkovv thestudyofsolarcellswithbacksidecontactsatlowillumination
AT gorbanap studyofsolarcellswithbacksidecontactsatlowillumination
AT kostylyovvp studyofsolarcellswithbacksidecontactsatlowillumination
AT litovchenkovg studyofsolarcellswithbacksidecontactsatlowillumination
AT sachenkoav studyofsolarcellswithbacksidecontactsatlowillumination
AT serbaaa studyofsolarcellswithbacksidecontactsatlowillumination
AT sokolovskyiio studyofsolarcellswithbacksidecontactsatlowillumination
AT chernenkovv studyofsolarcellswithbacksidecontactsatlowillumination
first_indexed 2023-10-18T20:32:17Z
last_indexed 2023-10-18T20:32:17Z
_version_ 1796150465555070976

Схожі ресурси