Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure
Using the method of deposition over the optical contact, the authors created nSnS2/n-CdIn₂Te₄ heterojunction and investigated temperature evolution of its currentvoltage characteristics under the forward bias U ≤ 3 V. Analyzing temperature dependence of the curves obtained, the main mechanisms of...
Збережено в:
| Дата: | 2010 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118739 |
| Теги: |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure / P.M. Gorley, Z.M. Grushka, O.G. Grushka, P.P. Gorley, I.I. Zabolotsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 444-447. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Using the method of deposition over the optical contact, the authors created nSnS2/n-CdIn₂Te₄
heterojunction and investigated temperature evolution of its currentvoltage
characteristics under the forward bias U ≤ 3 V. Analyzing temperature
dependence of the curves obtained, the main mechanisms of current transport through the
semiconductor contact were determined, allowing prediction of successful possible
applications of the heterojunction studied under high temperatures and elevated radiation
due to the parameters of the base semiconductors and the diode structure itself. |
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