Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure
Using the method of deposition over the optical contact, the authors created nSnS2/n-CdIn₂Te₄ heterojunction and investigated temperature evolution of its currentvoltage characteristics under the forward bias U ≤ 3 V. Analyzing temperature dependence of the curves obtained, the main mechanisms of...
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| Дата: | 2010 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118739 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure / P.M. Gorley, Z.M. Grushka, O.G. Grushka, P.P. Gorley, I.I. Zabolotsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 444-447. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118739 |
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dspace |
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irk-123456789-1187392017-06-01T03:05:36Z Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure Gorley, P.M. Grushka, Z.M. Grushka, O.G. Gorley, P.P. Zabolotsky, I.I. Using the method of deposition over the optical contact, the authors created nSnS2/n-CdIn₂Te₄ heterojunction and investigated temperature evolution of its currentvoltage characteristics under the forward bias U ≤ 3 V. Analyzing temperature dependence of the curves obtained, the main mechanisms of current transport through the semiconductor contact were determined, allowing prediction of successful possible applications of the heterojunction studied under high temperatures and elevated radiation due to the parameters of the base semiconductors and the diode structure itself. 2010 Article Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure / P.M. Gorley, Z.M. Grushka, O.G. Grushka, P.P. Gorley, I.I. Zabolotsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 444-447. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 73.40.Cg, Gk, Lq http://dspace.nbuv.gov.ua/handle/123456789/118739 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Using the method of deposition over the optical contact, the authors created nSnS2/n-CdIn₂Te₄
heterojunction and investigated temperature evolution of its currentvoltage
characteristics under the forward bias U ≤ 3 V. Analyzing temperature
dependence of the curves obtained, the main mechanisms of current transport through the
semiconductor contact were determined, allowing prediction of successful possible
applications of the heterojunction studied under high temperatures and elevated radiation
due to the parameters of the base semiconductors and the diode structure itself. |
| format |
Article |
| author |
Gorley, P.M. Grushka, Z.M. Grushka, O.G. Gorley, P.P. Zabolotsky, I.I. |
| spellingShingle |
Gorley, P.M. Grushka, Z.M. Grushka, O.G. Gorley, P.P. Zabolotsky, I.I. Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Gorley, P.M. Grushka, Z.M. Grushka, O.G. Gorley, P.P. Zabolotsky, I.I. |
| author_sort |
Gorley, P.M. |
| title |
Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure |
| title_short |
Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure |
| title_full |
Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure |
| title_fullStr |
Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure |
| title_full_unstemmed |
Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure |
| title_sort |
electrical properties of n-sns₂/n-cdin₂te₄ heterostructure |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2010 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118739 |
| citation_txt |
Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure / P.M. Gorley, Z.M. Grushka, O.G. Grushka, P.P. Gorley, I.I. Zabolotsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 444-447. — Бібліогр.: 14 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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| first_indexed |
2023-10-18T20:32:47Z |
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2023-10-18T20:32:47Z |
| _version_ |
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