Electron-electron drag in crystals with a multi-valley band. Magnetoresistivity and Hall-effect
Hall-effect and magnetoresistivity of electrons in multi-valley bands of Si and Ge is considered with due regard for direct intervalley drag. Search of contribution of this drag shows that this interactioin sufficiently changes both effects. Calculated here values substantially differ from conseq...
Збережено в:
| Дата: | 2009 |
|---|---|
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118834 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electron-electron drag in crystals with a multi-valley band. Magnetoresistivity and Hall-effect / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 349-356. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Hall-effect and magnetoresistivity of electrons in multi-valley bands of Si and
Ge is considered with due regard for direct intervalley drag. Search of contribution of
this drag shows that this interactioin sufficiently changes both effects. Calculated here
values substantially differ from consequent those obtained on the base of popular -
approximation. |
|---|