Stimulated emission of Cr²⁺ ions in ZnS:Cr thin-film electroluminescent structures
First observation of stimulated Cr²⁺ emission in ZnS:Cr electroluminescent (EL) impact-excited thin-film waveguide structures is reported. The structures consist of the following thin films deposited on a glass substrate: a transparent In₂O₃:Sn electrode, an insulator SiO₂/Al₂O₃ layer (~270 nm),...
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| Дата: | 2009 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118837 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Stimulated emission of Cr²⁺ ions in ZnS:Cr thin-film electroluminescent structures / N.A. Vlasenko, P.F. Oleksenko, M.A. Mukhlyo, L.I. Veligura, and Z.L. Denisova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 362-365. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1188372017-06-01T03:06:10Z Stimulated emission of Cr²⁺ ions in ZnS:Cr thin-film electroluminescent structures Vlasenko, N.A. Oleksenko, P.F. Mukhlyo, M.A. Veligura, L.I. Denisova, Z.L. First observation of stimulated Cr²⁺ emission in ZnS:Cr electroluminescent (EL) impact-excited thin-film waveguide structures is reported. The structures consist of the following thin films deposited on a glass substrate: a transparent In₂O₃:Sn electrode, an insulator SiO₂/Al₂O₃ layer (~270 nm), an EL ZnS:Cr film (~600 nm), the same insulator layer, and an Al electrode. The stimulated character of the emission recorded through the edge of the structure is evidenced by the following. With increasing the applied voltage, a broad band with three waveguide mode maxima in the edge emission spectrum changes into an intensifying and narrowing band. The maximum of this band is the same as that of the Cr²⁺ emission band recorded through the face, i.e. through the In₂O₃:Sn electrode (1.75 and ~2.6 µm at the Cr concentrations (5-7)*10¹⁹ and (2- 3)*10²⁰ cm⁻³, respectively). The five-fold narrowing is observed when increasing the voltage by ~4% in the case of the lower Cr concentration. The voltage and frequency dependences of the edge emission are stronger than those for the face emission. A small manifestation of the gain occurrence in the ZnS:Cr TFELS is also observed in the face emission. The possibility to create a new type of electrically pumped lasers with the impact excitation mechanism is discussed. 2009 Article Stimulated emission of Cr²⁺ ions in ZnS:Cr thin-film electroluminescent structures / N.A. Vlasenko, P.F. Oleksenko, M.A. Mukhlyo, L.I. Veligura, and Z.L. Denisova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 362-365. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS 78.45.+h, 78.60.Fi http://dspace.nbuv.gov.ua/handle/123456789/118837 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
First observation of stimulated Cr²⁺ emission in ZnS:Cr electroluminescent
(EL) impact-excited thin-film waveguide structures is reported. The structures consist of
the following thin films deposited on a glass substrate: a transparent In₂O₃:Sn electrode,
an insulator SiO₂/Al₂O₃ layer (~270 nm), an EL ZnS:Cr film (~600 nm), the same
insulator layer, and an Al electrode. The stimulated character of the emission recorded
through the edge of the structure is evidenced by the following. With increasing the
applied voltage, a broad band with three waveguide mode maxima in the edge emission
spectrum changes into an intensifying and narrowing band. The maximum of this band is
the same as that of the Cr²⁺ emission band recorded through the face, i.e. through the
In₂O₃:Sn electrode (1.75 and ~2.6 µm at the Cr concentrations (5-7)*10¹⁹ and (2-
3)*10²⁰ cm⁻³, respectively). The five-fold narrowing is observed when increasing the
voltage by ~4% in the case of the lower Cr concentration. The voltage and frequency
dependences of the edge emission are stronger than those for the face emission. A small
manifestation of the gain occurrence in the ZnS:Cr TFELS is also observed in the face
emission. The possibility to create a new type of electrically pumped lasers with the
impact excitation mechanism is discussed. |
| format |
Article |
| author |
Vlasenko, N.A. Oleksenko, P.F. Mukhlyo, M.A. Veligura, L.I. Denisova, Z.L. |
| spellingShingle |
Vlasenko, N.A. Oleksenko, P.F. Mukhlyo, M.A. Veligura, L.I. Denisova, Z.L. Stimulated emission of Cr²⁺ ions in ZnS:Cr thin-film electroluminescent structures Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Vlasenko, N.A. Oleksenko, P.F. Mukhlyo, M.A. Veligura, L.I. Denisova, Z.L. |
| author_sort |
Vlasenko, N.A. |
| title |
Stimulated emission of Cr²⁺ ions in ZnS:Cr thin-film electroluminescent structures |
| title_short |
Stimulated emission of Cr²⁺ ions in ZnS:Cr thin-film electroluminescent structures |
| title_full |
Stimulated emission of Cr²⁺ ions in ZnS:Cr thin-film electroluminescent structures |
| title_fullStr |
Stimulated emission of Cr²⁺ ions in ZnS:Cr thin-film electroluminescent structures |
| title_full_unstemmed |
Stimulated emission of Cr²⁺ ions in ZnS:Cr thin-film electroluminescent structures |
| title_sort |
stimulated emission of cr²⁺ ions in zns:cr thin-film electroluminescent structures |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2009 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118837 |
| citation_txt |
Stimulated emission of Cr²⁺ ions in ZnS:Cr thin-film electroluminescent structures / N.A. Vlasenko, P.F. Oleksenko, M.A. Mukhlyo, L.I. Veligura, and Z.L. Denisova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 362-365. — Бібліогр.: 9 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:33:07Z |
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