Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width
The relationship between response speed of a silicon n-well/p substrate photodiode and the depletion layer width has been investigated. Variation of both the junction capacitance and the series resistance of the photodiode with the depletion layer width have been analyzed. It is shown that the co...
Збережено в:
| Дата: | 2009 |
|---|---|
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118849 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width / Emad Hameed Hussein // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 424-428. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118849 |
|---|---|
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dspace |
| spelling |
irk-123456789-1188492017-06-01T03:05:28Z Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width Emad Hameed Hussein The relationship between response speed of a silicon n-well/p substrate photodiode and the depletion layer width has been investigated. Variation of both the junction capacitance and the series resistance of the photodiode with the depletion layer width have been analyzed. It is shown that the contribution of the time constant and the drift time in the rise time within the depletion layer can be decreased to an optimal value (less than 1ns) just for specific value of the depletion layer width and smaller value of the diffused junction area. 2009 Article Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width / Emad Hameed Hussein // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 424-428. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 73.40.-c, 85.60.Dw http://dspace.nbuv.gov.ua/handle/123456789/118849 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The relationship between response speed of a silicon n-well/p substrate
photodiode and the depletion layer width has been investigated. Variation of both the
junction capacitance and the series resistance of the photodiode with the depletion layer
width have been analyzed. It is shown that the contribution of the time constant and the
drift time in the rise time within the depletion layer can be decreased to an optimal value
(less than 1ns) just for specific value of the depletion layer width and smaller value of the
diffused junction area. |
| format |
Article |
| author |
Emad Hameed Hussein |
| spellingShingle |
Emad Hameed Hussein Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Emad Hameed Hussein |
| author_sort |
Emad Hameed Hussein |
| title |
Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width |
| title_short |
Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width |
| title_full |
Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width |
| title_fullStr |
Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width |
| title_full_unstemmed |
Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width |
| title_sort |
approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2009 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118849 |
| citation_txt |
Approaching to an optimal value of rise time in n-well/p substrate
photodiode by controlling depletion layer width / Emad Hameed Hussein // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 424-428. — Бібліогр.: 13 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:33:09Z |
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2023-10-18T20:33:09Z |
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