Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase
The work has suggested an adequate model describing formation of defects in films of AIVBVI compounds in vapor-phase growth. Being based on this model, it has given an analytical description of dependences for film electrophysical parameters (concentrations n, p and mobilities µn, µp of free char...
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| Дата: | 2008 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118850 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase / Ya.P. Saliy, І.М. Freik, V.V. Prokopiv (Jr) // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 167-170. — Бібліогр.: 6 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118850 |
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dspace |
| spelling |
irk-123456789-1188502017-06-01T03:06:59Z Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase Saliy, Ya.P. Freik, I.M. Prokopiv (Jr), V.V. The work has suggested an adequate model describing formation of defects in films of AIVBVI compounds in vapor-phase growth. Being based on this model, it has given an analytical description of dependences for film electrophysical parameters (concentrations n, p and mobilities µn, µp of free charge carriers) on technological factors of film growth. We have calculated concentrations of activated and inactivated defects as subject to temperature of film deposition. The developed model enables determination of entropy and enthalpy of defect formation processes. 2008 Article Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase / Ya.P. Saliy, І.М. Freik, V.V. Prokopiv (Jr) // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 167-170. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS 71.20.Nr, 71.55.-i, 81.15.Aa http://dspace.nbuv.gov.ua/handle/123456789/118850 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The work has suggested an adequate model describing formation of defects in
films of AIVBVI compounds in vapor-phase growth. Being based on this model, it has
given an analytical description of dependences for film electrophysical parameters
(concentrations n, p and mobilities µn, µp of free charge carriers) on technological factors
of film growth. We have calculated concentrations of activated and inactivated defects as
subject to temperature of film deposition. The developed model enables determination of
entropy and enthalpy of defect formation processes. |
| format |
Article |
| author |
Saliy, Ya.P. Freik, I.M. Prokopiv (Jr), V.V. |
| spellingShingle |
Saliy, Ya.P. Freik, I.M. Prokopiv (Jr), V.V. Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Saliy, Ya.P. Freik, I.M. Prokopiv (Jr), V.V. |
| author_sort |
Saliy, Ya.P. |
| title |
Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase |
| title_short |
Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase |
| title_full |
Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase |
| title_fullStr |
Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase |
| title_full_unstemmed |
Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase |
| title_sort |
formation and activation of defects in films of aivbvi compounds in the process of growing from vapor phase |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2008 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118850 |
| citation_txt |
Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase / Ya.P. Saliy, І.М. Freik, V.V. Prokopiv (Jr) // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 167-170. — Бібліогр.: 6 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:33:09Z |
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