Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices
This paper presents an evaluation of the transient performance of an optoelectronic integrated device. This device is composed of a quantum well infrared photodetector (QWIP), a heterojunction bipolar transistor (HBT) and a light emitting diode (LED). It is called as QWIP-HBT-LED optoelectronic i...
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| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
|---|---|
| Дата: | 2009 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118871 |
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| Цитувати: | Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices /Sh.M. Eladl, A. Nasr, and A. Aboshosha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 260-263. — Бібліогр.: 9 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118871 |
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dspace |
| spelling |
irk-123456789-1188712017-06-01T03:04:25Z Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices Eladl, Sh.M. Nasr, A. Aboshosha, A. This paper presents an evaluation of the transient performance of an optoelectronic integrated device. This device is composed of a quantum well infrared photodetector (QWIP), a heterojunction bipolar transistor (HBT) and a light emitting diode (LED). It is called as QWIP-HBT-LED optoelectronic integrated device. Evaluation of its transient response is based on the frequency response of the constituent devices. Analytical expressions describing the transient behavior, output derivative as a measure of speed, and the rise time are derived. The numerical results show that the transient performance of the version under consideration is mainly based on the individual quantum efficiencies and is improved with their growth. The device speed and rise time are enhanced with the increase of the cut-off frequency of HBT. 2009 Article Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices /Sh.M. Eladl, A. Nasr, and A. Aboshosha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 260-263. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS 85.60.-q, Dw, Jb http://dspace.nbuv.gov.ua/handle/123456789/118871 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
This paper presents an evaluation of the transient performance of an
optoelectronic integrated device. This device is composed of a quantum well infrared
photodetector (QWIP), a heterojunction bipolar transistor (HBT) and a light emitting
diode (LED). It is called as QWIP-HBT-LED optoelectronic integrated device.
Evaluation of its transient response is based on the frequency response of the constituent
devices. Analytical expressions describing the transient behavior, output derivative as a
measure of speed, and the rise time are derived. The numerical results show that the
transient performance of the version under consideration is mainly based on the
individual quantum efficiencies and is improved with their growth. The device speed and
rise time are enhanced with the increase of the cut-off frequency of HBT. |
| format |
Article |
| author |
Eladl, Sh.M. Nasr, A. Aboshosha, A. |
| spellingShingle |
Eladl, Sh.M. Nasr, A. Aboshosha, A. Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Eladl, Sh.M. Nasr, A. Aboshosha, A. |
| author_sort |
Eladl, Sh.M. |
| title |
Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices |
| title_short |
Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices |
| title_full |
Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices |
| title_fullStr |
Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices |
| title_full_unstemmed |
Dynamic characteristics of QWIP-HBT-LED optoelectronic integrated devices |
| title_sort |
dynamic characteristics of qwip-hbt-led optoelectronic integrated devices |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2009 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118871 |
| citation_txt |
Dynamic characteristics of QWIP-HBT-LED
optoelectronic integrated devices /Sh.M. Eladl, A. Nasr, and A. Aboshosha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 260-263. — Бібліогр.: 9 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT eladlshm dynamiccharacteristicsofqwiphbtledoptoelectronicintegrateddevices AT nasra dynamiccharacteristicsofqwiphbtledoptoelectronicintegrateddevices AT aboshoshaa dynamiccharacteristicsofqwiphbtledoptoelectronicintegrateddevices |
| first_indexed |
2023-10-18T20:33:12Z |
| last_indexed |
2023-10-18T20:33:12Z |
| _version_ |
1796150496820461568 |