Electron mobility in CdxHg₁₋xSe
Electron scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, ionized impurities in CdxHg₁₋xSe (0 ⩽ x ⩽ 0.547) samples annealled in selenium vapour or in dynamic vacuum are considered. Within the...
Збережено в:
| Дата: | 2009 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118873 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electron mobility in CdxHg₁₋xSe / O.P. Malyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 272-275. — Бібліогр.: 10 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Electron scattering on the short-range potential caused by interaction with
polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain,
ionized impurities in CdxHg₁₋xSe (0 ⩽ x ⩽ 0.547) samples annealled in selenium vapour or
in dynamic vacuum are considered. Within the framework of the precise solution of the
stationary Boltzmann equation on the base of short-range principle, temperature
dependences of the electron mobility within the range 4.2 – 300 K are calculated. A good
coordination of the theory to experiment in the investigated temperature range is
established. |
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