Electron mobility in CdxHg₁₋xSe
Electron scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, ionized impurities in CdxHg₁₋xSe (0 ⩽ x ⩽ 0.547) samples annealled in selenium vapour or in dynamic vacuum are considered. Within the...
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| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
|---|---|
| Дата: | 2009 |
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2009
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118873 |
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| Цитувати: | Electron mobility in CdxHg₁₋xSe / O.P. Malyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 272-275. — Бібліогр.: 10 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118873 |
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| record_format |
dspace |
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irk-123456789-1188732017-06-01T03:05:37Z Electron mobility in CdxHg₁₋xSe Malyk, O.P. Electron scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, ionized impurities in CdxHg₁₋xSe (0 ⩽ x ⩽ 0.547) samples annealled in selenium vapour or in dynamic vacuum are considered. Within the framework of the precise solution of the stationary Boltzmann equation on the base of short-range principle, temperature dependences of the electron mobility within the range 4.2 – 300 K are calculated. A good coordination of the theory to experiment in the investigated temperature range is established. 2009 Article Electron mobility in CdxHg₁₋xSe / O.P. Malyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 272-275. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 72.10.-d, 72.10.Fk, 72.15.-v http://dspace.nbuv.gov.ua/handle/123456789/118873 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Electron scattering on the short-range potential caused by interaction with
polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain,
ionized impurities in CdxHg₁₋xSe (0 ⩽ x ⩽ 0.547) samples annealled in selenium vapour or
in dynamic vacuum are considered. Within the framework of the precise solution of the
stationary Boltzmann equation on the base of short-range principle, temperature
dependences of the electron mobility within the range 4.2 – 300 K are calculated. A good
coordination of the theory to experiment in the investigated temperature range is
established. |
| format |
Article |
| author |
Malyk, O.P. |
| spellingShingle |
Malyk, O.P. Electron mobility in CdxHg₁₋xSe Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Malyk, O.P. |
| author_sort |
Malyk, O.P. |
| title |
Electron mobility in CdxHg₁₋xSe |
| title_short |
Electron mobility in CdxHg₁₋xSe |
| title_full |
Electron mobility in CdxHg₁₋xSe |
| title_fullStr |
Electron mobility in CdxHg₁₋xSe |
| title_full_unstemmed |
Electron mobility in CdxHg₁₋xSe |
| title_sort |
electron mobility in cdxhg₁₋xse |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2009 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118873 |
| citation_txt |
Electron mobility in CdxHg₁₋xSe / O.P. Malyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 272-275. — Бібліогр.: 10 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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AT malykop electronmobilityincdxhg1xse |
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2023-10-18T20:33:12Z |
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2023-10-18T20:33:12Z |
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1796150497031225344 |