Theoretical consideration of charge transport through the nanoindentor/GaAs junction
The process of indentation of GaAs single crystal by the conductive nanoindentor has been analyzed theoretically. The diode formed by the nanoindentor tip and small area of GaAs platelet has been considered. The evolution of local mechanical stress during the nanoindentation cycle and an appropri...
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| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
|---|---|
| Дата: | 2008 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118903 |
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| Цитувати: | Theoretical consideration of charge transport through the nanoindentor/GaAs junction / A. O. Kosogor, R. Nowak, D. Chrobak, V. A. L'vov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 217-220. — Бібліогр.: 6 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118903 |
|---|---|
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dspace |
| spelling |
irk-123456789-1189032017-06-02T03:04:16Z Theoretical consideration of charge transport through the nanoindentor/GaAs junction Kosogor, A.O. Nowak, R. Chrobak, D. L’vov, V.A. The process of indentation of GaAs single crystal by the conductive nanoindentor has been analyzed theoretically. The diode formed by the nanoindentor tip and small area of GaAs platelet has been considered. The evolution of local mechanical stress during the nanoindentation cycle and an appropriate transformation of electric potential difference inherent in tip/GaAs junction are described qualitatively. The nonmonotone variation of the mechanical stress and electric potential difference during the indentation cycle has been disclosed. The current spike experimentally registered in the moment of abrupt penetration of indentor tip into the GaAs platelet has been attributed to the non-monotone variation of potential difference during the indentation cycle. 2008 Article Theoretical consideration of charge transport through the nanoindentor/GaAs junction / A. O. Kosogor, R. Nowak, D. Chrobak, V. A. L'vov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 217-220. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS 07.10.Pz, 72.80.Ey, 73.40.-c, 62.40.+i http://dspace.nbuv.gov.ua/handle/123456789/118903 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The process of indentation of GaAs single crystal by the conductive
nanoindentor has been analyzed theoretically. The diode formed by the nanoindentor tip
and small area of GaAs platelet has been considered. The evolution of local mechanical
stress during the nanoindentation cycle and an appropriate transformation of electric
potential difference inherent in tip/GaAs junction are described qualitatively. The nonmonotone
variation of the mechanical stress and electric potential difference during the
indentation cycle has been disclosed. The current spike experimentally registered in the
moment of abrupt penetration of indentor tip into the GaAs platelet has been attributed to
the non-monotone variation of potential difference during the indentation cycle. |
| format |
Article |
| author |
Kosogor, A.O. Nowak, R. Chrobak, D. L’vov, V.A. |
| spellingShingle |
Kosogor, A.O. Nowak, R. Chrobak, D. L’vov, V.A. Theoretical consideration of charge transport through the nanoindentor/GaAs junction Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Kosogor, A.O. Nowak, R. Chrobak, D. L’vov, V.A. |
| author_sort |
Kosogor, A.O. |
| title |
Theoretical consideration of charge transport through the nanoindentor/GaAs junction |
| title_short |
Theoretical consideration of charge transport through the nanoindentor/GaAs junction |
| title_full |
Theoretical consideration of charge transport through the nanoindentor/GaAs junction |
| title_fullStr |
Theoretical consideration of charge transport through the nanoindentor/GaAs junction |
| title_full_unstemmed |
Theoretical consideration of charge transport through the nanoindentor/GaAs junction |
| title_sort |
theoretical consideration of charge transport through the nanoindentor/gaas junction |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2008 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118903 |
| citation_txt |
Theoretical consideration of charge transport through the nanoindentor/GaAs junction / A. O. Kosogor, R. Nowak, D. Chrobak, V. A. L'vov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 217-220. — Бібліогр.: 6 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT kosogorao theoreticalconsiderationofchargetransportthroughthenanoindentorgaasjunction AT nowakr theoreticalconsiderationofchargetransportthroughthenanoindentorgaasjunction AT chrobakd theoreticalconsiderationofchargetransportthroughthenanoindentorgaasjunction AT lvovva theoreticalconsiderationofchargetransportthroughthenanoindentorgaasjunction |
| first_indexed |
2023-10-18T20:33:16Z |
| last_indexed |
2023-10-18T20:33:16Z |
| _version_ |
1796150504332460032 |