Mapping between two models of etching process
We consider two models for the etching processes using numerical simulations based on cellular-automata discrete-lattice approach. In one model we use a uniform etching probability for each surface site. In another model the etching probability at a given site depends on the local environment of t...
Збережено в:
| Дата: | 2007 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики конденсованих систем НАН України
2007
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| Назва видання: | Condensed Matter Physics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118950 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Mapping between two models of etching process / T. Patsahan, A. Taleb, J. Stafiej, J.-P. Badiali // Condensed Matter Physics. — 2007. — Т. 10, № 4(52). — С. 579-585. — Бібліогр.: 12 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | We consider two models for the etching processes using numerical simulations based on cellular-automata
discrete-lattice approach. In one model we use a uniform etching probability for each surface site. In another
model the etching probability at a given site depends on the local environment of this site. In contrast to the
first model we have now a non-local description of the surface evolution. It is natural to consider the following
question: is this non-locality sufficient to induce new physics? To answer this question is the main goal of
the paper. We show that there exists an equivalence between the two models. This means that the non-local
model gives results similar to the local one provided we use an effective value of the etching probability. |
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