Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers

Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers

The results of low-frequency noise investigation in fully-depleted (FD) nFinFETs of Weff = 0.02 to 9.87 µm, Leff = 0.06 to 9.9 µm, processed on standard (SOI) and strained (sSOI) wafers are presented. It is shown that the McWhorter noise is typical at zero back gate voltage for the devices studie...

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Бібліографічні деталі
Дата:2008
Автори: Lukyanchikova, N., Garbar, N., Kudina, V., Smolanka, A., Simoen, E., Claeys, C.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/119049
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers / N. Lukyanchikova, N. Garbar, V. Kudina, A. Smolanka, E. Simoen, C. Claeys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 203-208. — Бібліогр.: 9 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-119049
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spelling irk-123456789-1190492017-06-04T03:03:35Z Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers Lukyanchikova, N. Garbar, N. Kudina, V. Smolanka, A. Simoen, E. Claeys, C. The results of low-frequency noise investigation in fully-depleted (FD) nFinFETs of Weff = 0.02 to 9.87 µm, Leff = 0.06 to 9.9 µm, processed on standard (SOI) and strained (sSOI) wafers are presented. It is shown that the McWhorter noise is typical at zero back gate voltage for the devices studied and the density of the corresponding noisy traps in the SiO₂ portion of the gate oxide is, as a rule, much higher than that in the HfO2 portion. The results on the McWhorter noise are used for studying the behavior of the electron mobility µ and the free electron density NS in the channel at V* ≥ 0.4 V where V* is the gate overdrive voltage. It is also shown that the Linear Kink Effect (LKE) Lorentzians appear in the low-frequency noise spectra at an accumulation back gate voltage and that the parameters of those Lorentzians are different for the sSOI and SOI nFinFETs. This is the first observation of the LKE noise under a back-gate accumulation bias for sufficiently wide nMuGFET. 2008 Article Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers / N. Lukyanchikova, N. Garbar, V. Kudina, A. Smolanka, E. Simoen, C. Claeys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 203-208. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS 73.50.Td, 85.30.Tv http://dspace.nbuv.gov.ua/handle/123456789/119049 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The results of low-frequency noise investigation in fully-depleted (FD) nFinFETs of Weff = 0.02 to 9.87 µm, Leff = 0.06 to 9.9 µm, processed on standard (SOI) and strained (sSOI) wafers are presented. It is shown that the McWhorter noise is typical at zero back gate voltage for the devices studied and the density of the corresponding noisy traps in the SiO₂ portion of the gate oxide is, as a rule, much higher than that in the HfO2 portion. The results on the McWhorter noise are used for studying the behavior of the electron mobility µ and the free electron density NS in the channel at V* ≥ 0.4 V where V* is the gate overdrive voltage. It is also shown that the Linear Kink Effect (LKE) Lorentzians appear in the low-frequency noise spectra at an accumulation back gate voltage and that the parameters of those Lorentzians are different for the sSOI and SOI nFinFETs. This is the first observation of the LKE noise under a back-gate accumulation bias for sufficiently wide nMuGFET.
format Article
author Lukyanchikova, N.
Garbar, N.
Kudina, V.
Smolanka, A.
Simoen, E.
Claeys, C.
spellingShingle Lukyanchikova, N.
Garbar, N.
Kudina, V.
Smolanka, A.
Simoen, E.
Claeys, C.
Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Lukyanchikova, N.
Garbar, N.
Kudina, V.
Smolanka, A.
Simoen, E.
Claeys, C.
author_sort Lukyanchikova, N.
title Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers
title_short Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers
title_full Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers
title_fullStr Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers
title_full_unstemmed Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers
title_sort low-frequency noise in nfinfets of different dimensions processed in strained and non-strained soi wafers
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2008
url http://dspace.nbuv.gov.ua/handle/123456789/119049
citation_txt Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers / N. Lukyanchikova, N. Garbar, V. Kudina, A. Smolanka, E. Simoen, C. Claeys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 203-208. — Бібліогр.: 9 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT lukyanchikovan lowfrequencynoiseinnfinfetsofdifferentdimensionsprocessedinstrainedandnonstrainedsoiwafers
AT garbarn lowfrequencynoiseinnfinfetsofdifferentdimensionsprocessedinstrainedandnonstrainedsoiwafers
AT kudinav lowfrequencynoiseinnfinfetsofdifferentdimensionsprocessedinstrainedandnonstrainedsoiwafers
AT smolankaa lowfrequencynoiseinnfinfetsofdifferentdimensionsprocessedinstrainedandnonstrainedsoiwafers
AT simoene lowfrequencynoiseinnfinfetsofdifferentdimensionsprocessedinstrainedandnonstrainedsoiwafers
AT claeysc lowfrequencynoiseinnfinfetsofdifferentdimensionsprocessedinstrainedandnonstrainedsoiwafers
first_indexed 2023-10-18T20:33:29Z
last_indexed 2023-10-18T20:33:29Z
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