Optical and photoelectrical properties of the tetrathiotetracene-fullerene (TTTC₆₀) film heterostructures
The optical and photoelectrical properties of heterostructures (HS) SnO₂ТTTC₆₀Ag are investigated. The additional absorption of HS ТTT and C₆₀ is revealed in comparison with those for their components, which testifies to the formation of complexes between the ТTT and C₆₀ molecules near the ТTT...
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| Дата: | 2008 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119055 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Optical and photoelectrical properties of the tetrathiotetracene-fullerene (TTTC₆₀) film heterostructures / M.P. Gorishny, A.B. Verbitsky, A.V. Kovalchuk, T.N. Kovalchuk, P.N. Lutsyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 236-239. — Бібліогр.: 15 назв. — англ. |
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irk-123456789-1190552017-06-04T03:03:36Z Optical and photoelectrical properties of the tetrathiotetracene-fullerene (TTTC₆₀) film heterostructures Gorishny, M.P. Verbitsky, A.B. Kovalchuk, A.V. Kovalchuk, T.N. Lutsyk, P.N. The optical and photoelectrical properties of heterostructures (HS) SnO₂ТTTC₆₀Ag are investigated. The additional absorption of HS ТTT and C₆₀ is revealed in comparison with those for their components, which testifies to the formation of complexes between the ТTT and C₆₀ molecules near the ТTT-C₆₀ interface. Currentvoltage characteristics (J-V) of a dark current is symmetric, as well as corresponds to the Ohm law for the voltages of 0 to 0.4 V. In the voltage range of 0.4 to 1.0 V, the branch of J-V at the positive polarity (I₊) goes above that at the negative polarity (I₋) at a SnO₂- electrode. Thus, in the double logarithmic scale, I₊ and I₋ are described by direct lines with the angular factors 1.77 and 1.37, accordingly, and exponents in the half-logarithmic coordinates (log I−U). The open-circuit voltage Voc has a positive polarity at the SnO₂- electrode irrespective of the illumination direction of a sample. Photovoltage is caused by antiblocking bends of bands for holes and electrons near the SnO₂- and Ag-electrodes of ТTT and C₆₀ films, accordingly. The dark effective specific resistance of the HS SnO₂ТTTC₆₀Ag is equal to 5·10⁷ Ohm·cm. 2008 Article Optical and photoelectrical properties of the tetrathiotetracene-fullerene (TTTC₆₀) film heterostructures / M.P. Gorishny, A.B. Verbitsky, A.V. Kovalchuk, T.N. Kovalchuk, P.N. Lutsyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 236-239. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 73.50.Pz, 73.61.Wp, 78.66.Tr http://dspace.nbuv.gov.ua/handle/123456789/119055 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The optical and photoelectrical properties of heterostructures (HS)
SnO₂ТTTC₆₀Ag are investigated. The additional absorption of HS ТTT and C₆₀ is
revealed in comparison with those for their components, which testifies to the formation
of complexes between the ТTT and C₆₀ molecules near the ТTT-C₆₀ interface. Currentvoltage
characteristics (J-V) of a dark current is symmetric, as well as corresponds to the
Ohm law for the voltages of 0 to 0.4 V. In the voltage range of 0.4 to 1.0 V, the branch of
J-V at the positive polarity (I₊) goes above that at the negative polarity (I₋) at a SnO₂-
electrode. Thus, in the double logarithmic scale, I₊ and I₋ are described by direct lines
with the angular factors 1.77 and 1.37, accordingly, and exponents in the half-logarithmic
coordinates (log I−U). The open-circuit voltage Voc has a positive polarity at the SnO₂-
electrode irrespective of the illumination direction of a sample. Photovoltage is caused by
antiblocking bends of bands for holes and electrons near the SnO₂- and Ag-electrodes of
ТTT and C₆₀ films, accordingly. The dark effective specific resistance of the HS
SnO₂ТTTC₆₀Ag is equal to 5·10⁷
Ohm·cm. |
| format |
Article |
| author |
Gorishny, M.P. Verbitsky, A.B. Kovalchuk, A.V. Kovalchuk, T.N. Lutsyk, P.N. |
| spellingShingle |
Gorishny, M.P. Verbitsky, A.B. Kovalchuk, A.V. Kovalchuk, T.N. Lutsyk, P.N. Optical and photoelectrical properties of the tetrathiotetracene-fullerene (TTTC₆₀) film heterostructures Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Gorishny, M.P. Verbitsky, A.B. Kovalchuk, A.V. Kovalchuk, T.N. Lutsyk, P.N. |
| author_sort |
Gorishny, M.P. |
| title |
Optical and photoelectrical properties of the tetrathiotetracene-fullerene (TTTC₆₀) film heterostructures |
| title_short |
Optical and photoelectrical properties of the tetrathiotetracene-fullerene (TTTC₆₀) film heterostructures |
| title_full |
Optical and photoelectrical properties of the tetrathiotetracene-fullerene (TTTC₆₀) film heterostructures |
| title_fullStr |
Optical and photoelectrical properties of the tetrathiotetracene-fullerene (TTTC₆₀) film heterostructures |
| title_full_unstemmed |
Optical and photoelectrical properties of the tetrathiotetracene-fullerene (TTTC₆₀) film heterostructures |
| title_sort |
optical and photoelectrical properties of the tetrathiotetracene-fullerene (tttc₆₀) film heterostructures |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2008 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119055 |
| citation_txt |
Optical and photoelectrical properties of the tetrathiotetracene-fullerene (TTTC₆₀) film heterostructures / M.P. Gorishny, A.B. Verbitsky, A.V. Kovalchuk, T.N. Kovalchuk, P.N. Lutsyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 236-239. — Бібліогр.: 15 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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