Investigations of surface morphology and chemical composition of Ag/ZnS/glassceramic thin-film structure

The surface morphology and chemical composition of Ag/ZnS/glassceramic thin-film system obtained by close-spaced vacuum sublimation technique under different grow conditions were investigated. Examination of surface profile and morphology was performed by scanning electron and optical microscopy....

Повний опис

Збережено в:
Бібліографічні деталі
Дата:2008
Автори: Kurbatov, D., Opanasyuk, A., Denisenko, V., Kramchenkov, A., Zaharets, M.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/119059
Теги: Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Investigations of surface morphology and chemical composition of Ag/ZnS/glassceramic thin-film structure / D. Kurbatov, A. Opanasyuk, V. Denisenko, A. Kramchenkov, M. Zaharets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 252-256. — Бібліогр.: 14 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
Опис
Резюме:The surface morphology and chemical composition of Ag/ZnS/glassceramic thin-film system obtained by close-spaced vacuum sublimation technique under different grow conditions were investigated. Examination of surface profile and morphology was performed by scanning electron and optical microscopy. Chemical composition was studied by Rutherford back scattering method. Results of morphology studies enabled to determine dependence of the growth mechanism, roughness Ra, grain size D of ZnS layers on the growth conditions. The researches of chemical composition allowed to determine the concentration of compound elements and impurities, deviation from stoichiometry and thickness distribution of chemical elements.