Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers

Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers

Thermoelectric power, electrical conductivity, and high field Hall effect were studied over a broad temperature range in ferromagnetic Ga₁₋xMnxAs epitaxial layers (0.015 ≤ x ≤ 0.06). Thermoelectric power analysis gives information about carrier transport mechanisms in layers with both metallic an...

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Бібліографічні деталі
Дата:2008
Автори: Osinniy, V., Dybko, K., Jedrzejczak, A., Arciszewska, M., Dobrowolski, W., Story, T., Radchenko, M.V., Sichkovskiy, V.I., Lashkarev, G.V., Olsthoorn, S.M., Sadowski, J.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2008
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/119060
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers / V. Osinniy, K. Dybko, A. Jedrzejczak, M. Arciszewska, W. Dobrowolski, T. Story, M.V. Radchenko, V.I. Sichkovskiy, G.V. Lashkarev, S.M. Olsthoorn, J. Sadowski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 257-265. — Бібліогр.: 45 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1190602017-06-04T03:02:32Z Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers Osinniy, V. Dybko, K. Jedrzejczak, A. Arciszewska, M. Dobrowolski, W. Story, T. Radchenko, M.V. Sichkovskiy, V.I. Lashkarev, G.V. Olsthoorn, S.M. Sadowski, J. Thermoelectric power, electrical conductivity, and high field Hall effect were studied over a broad temperature range in ferromagnetic Ga₁₋xMnxAs epitaxial layers (0.015 ≤ x ≤ 0.06). Thermoelectric power analysis gives information about carrier transport mechanisms in layers with both metallic and non-metallic types of conductivity and allows determination of the Fermi energy and carrier concentration. At high temperatures (T > 70 K), the thermoelectric power in GaMnAs linearly increases with increasing temperature. That indicates the presence of a degenerate hole gas with the Fermi energy EF = 220 ± 25 meV, nearly independent of Mn content (for 0.02 ≤ x ≤ 0.05). At lower temperatures, GaMnAs layers with metallic-type conductivity show an additional contribution to the thermoelectric power with the maximum close to the Curie temperature. 2008 Article Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers / V. Osinniy, K. Dybko, A. Jedrzejczak, M. Arciszewska, W. Dobrowolski, T. Story, M.V. Radchenko, V.I. Sichkovskiy, G.V. Lashkarev, S.M. Olsthoorn, J. Sadowski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 257-265. — Бібліогр.: 45 назв. — англ. 1560-8034 PACS 73.50.Lw, 73.61.Ey, 75.50.Pp http://dspace.nbuv.gov.ua/handle/123456789/119060 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Thermoelectric power, electrical conductivity, and high field Hall effect were studied over a broad temperature range in ferromagnetic Ga₁₋xMnxAs epitaxial layers (0.015 ≤ x ≤ 0.06). Thermoelectric power analysis gives information about carrier transport mechanisms in layers with both metallic and non-metallic types of conductivity and allows determination of the Fermi energy and carrier concentration. At high temperatures (T > 70 K), the thermoelectric power in GaMnAs linearly increases with increasing temperature. That indicates the presence of a degenerate hole gas with the Fermi energy EF = 220 ± 25 meV, nearly independent of Mn content (for 0.02 ≤ x ≤ 0.05). At lower temperatures, GaMnAs layers with metallic-type conductivity show an additional contribution to the thermoelectric power with the maximum close to the Curie temperature.
format Article
author Osinniy, V.
Dybko, K.
Jedrzejczak, A.
Arciszewska, M.
Dobrowolski, W.
Story, T.
Radchenko, M.V.
Sichkovskiy, V.I.
Lashkarev, G.V.
Olsthoorn, S.M.
Sadowski, J.
spellingShingle Osinniy, V.
Dybko, K.
Jedrzejczak, A.
Arciszewska, M.
Dobrowolski, W.
Story, T.
Radchenko, M.V.
Sichkovskiy, V.I.
Lashkarev, G.V.
Olsthoorn, S.M.
Sadowski, J.
Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Osinniy, V.
Dybko, K.
Jedrzejczak, A.
Arciszewska, M.
Dobrowolski, W.
Story, T.
Radchenko, M.V.
Sichkovskiy, V.I.
Lashkarev, G.V.
Olsthoorn, S.M.
Sadowski, J.
author_sort Osinniy, V.
title Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
title_short Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
title_full Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
title_fullStr Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
title_full_unstemmed Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
title_sort thermoelectric studies of electronic properties of ferromagnetic gamnas layers
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2008
url http://dspace.nbuv.gov.ua/handle/123456789/119060
citation_txt Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers / V. Osinniy, K. Dybko, A. Jedrzejczak, M. Arciszewska, W. Dobrowolski, T. Story, M.V. Radchenko, V.I. Sichkovskiy, G.V. Lashkarev, S.M. Olsthoorn, J. Sadowski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 257-265. — Бібліогр.: 45 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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AT jedrzejczaka thermoelectricstudiesofelectronicpropertiesofferromagneticgamnaslayers
AT arciszewskam thermoelectricstudiesofelectronicpropertiesofferromagneticgamnaslayers
AT dobrowolskiw thermoelectricstudiesofelectronicpropertiesofferromagneticgamnaslayers
AT storyt thermoelectricstudiesofelectronicpropertiesofferromagneticgamnaslayers
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first_indexed 2023-10-18T20:33:30Z
last_indexed 2023-10-18T20:33:30Z
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