Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
Thermoelectric power, electrical conductivity, and high field Hall effect were studied over a broad temperature range in ferromagnetic Ga₁₋xMnxAs epitaxial layers (0.015 ≤ x ≤ 0.06). Thermoelectric power analysis gives information about carrier transport mechanisms in layers with both metallic an...
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Дата: | 2008 |
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Автори: | , , , , , , , , , , |
Формат: | Стаття |
Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2008
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Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119060 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers / V. Osinniy, K. Dybko, A. Jedrzejczak, M. Arciszewska, W. Dobrowolski, T. Story, M.V. Radchenko, V.I. Sichkovskiy, G.V. Lashkarev, S.M. Olsthoorn, J. Sadowski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 257-265. — Бібліогр.: 45 назв. — англ. |
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irk-123456789-1190602017-06-04T03:02:32Z Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers Osinniy, V. Dybko, K. Jedrzejczak, A. Arciszewska, M. Dobrowolski, W. Story, T. Radchenko, M.V. Sichkovskiy, V.I. Lashkarev, G.V. Olsthoorn, S.M. Sadowski, J. Thermoelectric power, electrical conductivity, and high field Hall effect were studied over a broad temperature range in ferromagnetic Ga₁₋xMnxAs epitaxial layers (0.015 ≤ x ≤ 0.06). Thermoelectric power analysis gives information about carrier transport mechanisms in layers with both metallic and non-metallic types of conductivity and allows determination of the Fermi energy and carrier concentration. At high temperatures (T > 70 K), the thermoelectric power in GaMnAs linearly increases with increasing temperature. That indicates the presence of a degenerate hole gas with the Fermi energy EF = 220 ± 25 meV, nearly independent of Mn content (for 0.02 ≤ x ≤ 0.05). At lower temperatures, GaMnAs layers with metallic-type conductivity show an additional contribution to the thermoelectric power with the maximum close to the Curie temperature. 2008 Article Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers / V. Osinniy, K. Dybko, A. Jedrzejczak, M. Arciszewska, W. Dobrowolski, T. Story, M.V. Radchenko, V.I. Sichkovskiy, G.V. Lashkarev, S.M. Olsthoorn, J. Sadowski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 257-265. — Бібліогр.: 45 назв. — англ. 1560-8034 PACS 73.50.Lw, 73.61.Ey, 75.50.Pp http://dspace.nbuv.gov.ua/handle/123456789/119060 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
collection |
DSpace DC |
language |
English |
description |
Thermoelectric power, electrical conductivity, and high field Hall effect were
studied over a broad temperature range in ferromagnetic Ga₁₋xMnxAs epitaxial layers
(0.015 ≤ x ≤ 0.06). Thermoelectric power analysis gives information about carrier
transport mechanisms in layers with both metallic and non-metallic types of conductivity
and allows determination of the Fermi energy and carrier concentration. At high
temperatures (T > 70 K), the thermoelectric power in GaMnAs linearly increases
with increasing temperature. That indicates the presence of a degenerate hole gas
with the Fermi energy EF = 220 ± 25 meV, nearly independent of Mn content (for
0.02 ≤ x ≤ 0.05). At lower temperatures, GaMnAs layers with metallic-type conductivity
show an additional contribution to the thermoelectric power with the maximum close to
the Curie temperature. |
format |
Article |
author |
Osinniy, V. Dybko, K. Jedrzejczak, A. Arciszewska, M. Dobrowolski, W. Story, T. Radchenko, M.V. Sichkovskiy, V.I. Lashkarev, G.V. Olsthoorn, S.M. Sadowski, J. |
spellingShingle |
Osinniy, V. Dybko, K. Jedrzejczak, A. Arciszewska, M. Dobrowolski, W. Story, T. Radchenko, M.V. Sichkovskiy, V.I. Lashkarev, G.V. Olsthoorn, S.M. Sadowski, J. Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Osinniy, V. Dybko, K. Jedrzejczak, A. Arciszewska, M. Dobrowolski, W. Story, T. Radchenko, M.V. Sichkovskiy, V.I. Lashkarev, G.V. Olsthoorn, S.M. Sadowski, J. |
author_sort |
Osinniy, V. |
title |
Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers |
title_short |
Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers |
title_full |
Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers |
title_fullStr |
Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers |
title_full_unstemmed |
Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers |
title_sort |
thermoelectric studies of electronic properties of ferromagnetic gamnas layers |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
2008 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/119060 |
citation_txt |
Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers / V. Osinniy, K. Dybko, A. Jedrzejczak, M. Arciszewska, W. Dobrowolski, T. Story, M.V. Radchenko, V.I. Sichkovskiy, G.V. Lashkarev, S.M. Olsthoorn, J. Sadowski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 3. — С. 257-265. — Бібліогр.: 45 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
work_keys_str_mv |
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first_indexed |
2023-10-18T20:33:30Z |
last_indexed |
2023-10-18T20:33:30Z |
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1796150520456413184 |