Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique
Hot-wall technique has been used for preparation of CdTe-PbTe heterostructures. BaF₂ single crystals served as substrates. Electrical, photoelectric properties as well as noise spectra were investigated. Heterostructures exhibit photosensitivity up to room temperatures in the middle infrared (IR) re...
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| Дата: | 1999 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119065 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique / S. Movchan, F. Sizov, V. Tetyorkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 84-87. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-119065 |
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dspace |
| spelling |
irk-123456789-1190652017-06-04T03:02:46Z Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique Movchan, S. Sizov, F. Tetyorkin, V. Hot-wall technique has been used for preparation of CdTe-PbTe heterostructures. BaF₂ single crystals served as substrates. Electrical, photoelectric properties as well as noise spectra were investigated. Heterostructures exhibit photosensitivity up to room temperatures in the middle infrared (IR) region. In the heterostructures investigated at room temperature the 1/f noise is observed at frequencies much less compared to those ones observed in PbSe photoresistors (f = 3000 Hz) for the same IR region. Carrier transport mechanisms and band diagram of the heterostructures are briefly discussed. 1999 Article Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique / S. Movchan, F. Sizov, V. Tetyorkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 84-87. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS 71.28, 72.20, 73.40 http://dspace.nbuv.gov.ua/handle/123456789/119065 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Hot-wall technique has been used for preparation of CdTe-PbTe heterostructures. BaF₂ single crystals served as substrates. Electrical, photoelectric properties as well as noise spectra were investigated. Heterostructures exhibit photosensitivity up to room temperatures in the middle infrared (IR) region. In the heterostructures investigated at room temperature the 1/f noise is observed at frequencies much less compared to those ones observed in PbSe photoresistors (f = 3000 Hz) for the same IR region. Carrier transport mechanisms and band diagram of the heterostructures are briefly discussed. |
| format |
Article |
| author |
Movchan, S. Sizov, F. Tetyorkin, V. |
| spellingShingle |
Movchan, S. Sizov, F. Tetyorkin, V. Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Movchan, S. Sizov, F. Tetyorkin, V. |
| author_sort |
Movchan, S. |
| title |
Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique |
| title_short |
Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique |
| title_full |
Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique |
| title_fullStr |
Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique |
| title_full_unstemmed |
Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique |
| title_sort |
photosensitive heterostructures cdte-pbte prepared by hot-wall technique |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
1999 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119065 |
| citation_txt |
Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique / S. Movchan, F. Sizov, V. Tetyorkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 84-87. — Бібліогр.: 9 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT movchans photosensitiveheterostructurescdtepbtepreparedbyhotwalltechnique AT sizovf photosensitiveheterostructurescdtepbtepreparedbyhotwalltechnique AT tetyorkinv photosensitiveheterostructurescdtepbtepreparedbyhotwalltechnique |
| first_indexed |
2023-10-18T20:33:40Z |
| last_indexed |
2023-10-18T20:33:40Z |
| _version_ |
1796150520876892160 |