Varistor-like current-voltage characteristic of porous silicon

The porous silicon (PS) current-voltage characteristic (CVC) has measured in transverse and longitudinal applied electric field. The obtained CVC has a varistor-like shape. Besides the practical application this confirms the PS grain structure whose influence is discussed in analizing the mechanism...

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Видавець:Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Дата:1999
Автори: Vakulenko, O.V., Kondratenko, S.V., Shutov, B.M.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/119066
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Цитувати:Varistor-like current-voltage characteristic of porous silicon / O.V. Vakulenko, S.V. Kondratenko, B.M. Shutov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 88-89. — Бібліогр.: 7 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-119066
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spelling irk-123456789-1190662017-06-04T03:03:44Z Varistor-like current-voltage characteristic of porous silicon Vakulenko, O.V. Kondratenko, S.V. Shutov, B.M. The porous silicon (PS) current-voltage characteristic (CVC) has measured in transverse and longitudinal applied electric field. The obtained CVC has a varistor-like shape. Besides the practical application this confirms the PS grain structure whose influence is discussed in analizing the mechanism of the visible luminescence in PS. 1999 Article Varistor-like current-voltage characteristic of porous silicon / O.V. Vakulenko, S.V. Kondratenko, B.M. Shutov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 88-89. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 72.80.Ng, s5.11 http://dspace.nbuv.gov.ua/handle/123456789/119066 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The porous silicon (PS) current-voltage characteristic (CVC) has measured in transverse and longitudinal applied electric field. The obtained CVC has a varistor-like shape. Besides the practical application this confirms the PS grain structure whose influence is discussed in analizing the mechanism of the visible luminescence in PS.
format Article
author Vakulenko, O.V.
Kondratenko, S.V.
Shutov, B.M.
spellingShingle Vakulenko, O.V.
Kondratenko, S.V.
Shutov, B.M.
Varistor-like current-voltage characteristic of porous silicon
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Vakulenko, O.V.
Kondratenko, S.V.
Shutov, B.M.
author_sort Vakulenko, O.V.
title Varistor-like current-voltage characteristic of porous silicon
title_short Varistor-like current-voltage characteristic of porous silicon
title_full Varistor-like current-voltage characteristic of porous silicon
title_fullStr Varistor-like current-voltage characteristic of porous silicon
title_full_unstemmed Varistor-like current-voltage characteristic of porous silicon
title_sort varistor-like current-voltage characteristic of porous silicon
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 1999
url http://dspace.nbuv.gov.ua/handle/123456789/119066
citation_txt Varistor-like current-voltage characteristic of porous silicon / O.V. Vakulenko, S.V. Kondratenko, B.M. Shutov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 88-89. — Бібліогр.: 7 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT vakulenkoov varistorlikecurrentvoltagecharacteristicofporoussilicon
AT kondratenkosv varistorlikecurrentvoltagecharacteristicofporoussilicon
AT shutovbm varistorlikecurrentvoltagecharacteristicofporoussilicon
first_indexed 2023-10-18T20:33:40Z
last_indexed 2023-10-18T20:33:40Z
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