Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering
Dielectric layers of Al₂O₃, MgO, AlN and TiO₂ were formed by using ion-plasma sputtering method. Their microstructure and electrophysical properties in the range of 20 - 400°C were investigated. The conductivity mechanism, depth of traps and losses mechanism were established. The ohmic contact forma...
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| Дата: | 2014 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2014
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| Назва видання: | Functional Materials |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119115 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering / V.Pidkova, I.Brodnikovska, Z.Duriagina, V.Petrovskyy // Functional Materials. — 2015. — Т. 22, № 1. — С. 34-39. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1191152017-06-05T03:04:14Z Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering Pidkova, V. Brodnikovska, I. Duriagina, Z. Petrovskyy, V. Characterization and properties Dielectric layers of Al₂O₃, MgO, AlN and TiO₂ were formed by using ion-plasma sputtering method. Their microstructure and electrophysical properties in the range of 20 - 400°C were investigated. The conductivity mechanism, depth of traps and losses mechanism were established. The ohmic contact formation was revealed in TiO₂/40X13 system through which an injection of charge carries from the alloy into the dielectric layer occurs and its contribution to the electric equivalent circuit of substitution was assessed. 2014-12-12 Article Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering / V.Pidkova, I.Brodnikovska, Z.Duriagina, V.Petrovskyy // Functional Materials. — 2015. — Т. 22, № 1. — С. 34-39. — Бібліогр.: 8 назв. — англ. 1027-5495 DOI: http://dx.doi.org/10.15407/fm22.01.034 http://dspace.nbuv.gov.ua/handle/123456789/119115 en Functional Materials НТК «Інститут монокристалів» НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
Characterization and properties Characterization and properties |
| spellingShingle |
Characterization and properties Characterization and properties Pidkova, V. Brodnikovska, I. Duriagina, Z. Petrovskyy, V. Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering Functional Materials |
| description |
Dielectric layers of Al₂O₃, MgO, AlN and TiO₂ were formed by using ion-plasma sputtering method. Their microstructure and electrophysical properties in the range of 20 - 400°C were investigated. The conductivity mechanism, depth of traps and losses mechanism were established. The ohmic contact formation was revealed in TiO₂/40X13 system through which an injection of charge carries from the alloy into the dielectric layer occurs and its contribution to the electric equivalent circuit of substitution was assessed. |
| format |
Article |
| author |
Pidkova, V. Brodnikovska, I. Duriagina, Z. Petrovskyy, V. |
| author_facet |
Pidkova, V. Brodnikovska, I. Duriagina, Z. Petrovskyy, V. |
| author_sort |
Pidkova, V. |
| title |
Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering |
| title_short |
Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering |
| title_full |
Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering |
| title_fullStr |
Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering |
| title_full_unstemmed |
Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering |
| title_sort |
structure and properties of mg, al, ti oxide and nitride layers formed by ion-plasma sputtering |
| publisher |
НТК «Інститут монокристалів» НАН України |
| publishDate |
2014 |
| topic_facet |
Characterization and properties |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119115 |
| citation_txt |
Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering / V.Pidkova, I.Brodnikovska, Z.Duriagina, V.Petrovskyy // Functional Materials. — 2015. — Т. 22, № 1. — С. 34-39. — Бібліогр.: 8 назв. — англ. |
| series |
Functional Materials |
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| first_indexed |
2023-10-18T20:33:43Z |
| last_indexed |
2023-10-18T20:33:43Z |
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1796150525968777216 |