Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes
The article provides specified mathematic modeling of oxygen distribution mechanism in Si ingots. Experimentally such model parameters as quartz melting speed for different melting zones, initial oxygen concentration in melt, influence of crucible rotation speed on melting rate. The work outlines th...
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| Дата: | 2004 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/119116 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes / A.P. Oksanich, S.E. Pritchin, A.V. Vasheruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 236-239. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-119116 |
|---|---|
| record_format |
dspace |
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irk-123456789-1191162017-06-05T03:02:30Z Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes Oksanich, A.P. Pritchin, S.E. Vasheruk, A.V. The article provides specified mathematic modeling of oxygen distribution mechanism in Si ingots. Experimentally such model parameters as quartz melting speed for different melting zones, initial oxygen concentration in melt, influence of crucible rotation speed on melting rate. The work outlines the results of computer modeling. The results of theoretical and experimental investigations carried make possible to predict oxygen concentration in Si ingot and define the technology parameters for growing ingots of stated concentration. 2004 Article Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes / A.P. Oksanich, S.E. Pritchin, A.V. Vasheruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 236-239. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 42.65; 42.70; 61.70 http://dspace.nbuv.gov.ua/handle/123456789/119116 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The article provides specified mathematic modeling of oxygen distribution mechanism in Si ingots. Experimentally such model parameters as quartz melting speed for different melting zones, initial oxygen concentration in melt, influence of crucible rotation speed on melting rate. The work outlines the results of computer modeling. The results of theoretical and experimental investigations carried make possible to predict oxygen concentration in Si ingot and define the technology parameters for growing ingots of stated concentration. |
| format |
Article |
| author |
Oksanich, A.P. Pritchin, S.E. Vasheruk, A.V. |
| spellingShingle |
Oksanich, A.P. Pritchin, S.E. Vasheruk, A.V. Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Oksanich, A.P. Pritchin, S.E. Vasheruk, A.V. |
| author_sort |
Oksanich, A.P. |
| title |
Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes |
| title_short |
Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes |
| title_full |
Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes |
| title_fullStr |
Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes |
| title_full_unstemmed |
Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes |
| title_sort |
mathematic modeling the oxygen distribution mechanism in si ingots during growing processes |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2004 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/119116 |
| citation_txt |
Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes / A.P. Oksanich, S.E. Pritchin, A.V. Vasheruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 236-239. — Бібліогр.: 8 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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| first_indexed |
2023-10-18T20:33:44Z |
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2023-10-18T20:33:44Z |
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